发明授权
- 专利标题: Plasma arcing sensor
- 专利标题(中): 等离子体电弧传感器
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申请号: US09561117申请日: 2000-04-28
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公开(公告)号: US06500389B1公开(公告)日: 2002-12-31
- 发明人: Hsiao-Pang Chou , Kuan-Cheng Su
- 申请人: Hsiao-Pang Chou , Kuan-Cheng Su
- 优先权: TW89103702A 20000302
- 主分类号: G01N3096
- IPC分类号: G01N3096
摘要:
A plasma arcing sensor is used to increase the frequency of plasma arcing by way of neutralization of positive charges and negative charges. When the plasma arcing can be predicted, the process parameters to prevent from the plasma arcing can be carried out. The plasma arcing sensor comprises a top conductive layer formed over a substrate. A conductive layer is disposed between the top conductive layer and the wafer where the conductive layer and the top conductive layer are electrically isolated with dielectrics.
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