- 专利标题： Semiconductor integrated circuit
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申请号： US09849392申请日： 2001-05-07
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公开(公告)号： US06501326B2公开(公告)日： 2002-12-31
- 发明人: Nobuyuki Fujii , Fukashi Morishita , Akira Yamazaki , Yasuhiko Taito , Mako Okamoto
- 申请人： Nobuyuki Fujii , Fukashi Morishita , Akira Yamazaki , Yasuhiko Taito , Mako Okamoto
- 优先权： JP2000-387687 20001220
- 主分类号： G05F110
- IPC分类号： G05F110
摘要：
A capacitor (C12) is connected between a node (L) in a double boost part and the ground, and the amplitude of a repetitive pulse from the node (L) is made less than twice that of the power-supply voltage through utilization of charge and discharge of the capacitor (C12).
公开/授权文献
- US20020075064A1 Semiconductor integrated circuit 公开/授权日：2002-06-20
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