发明授权
- 专利标题: Photomask blank, photomask and method of manufacture
- 专利标题(中): 光掩模坯料,光掩模和制造方法
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申请号: US09783322申请日: 2001-02-15
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公开(公告)号: US06503669B2公开(公告)日: 2003-01-07
- 发明人: Hideo Kaneko , Yukio Inazuki , Tamotsu Maruyama , Satoshi Okazaki
- 申请人: Hideo Kaneko , Yukio Inazuki , Tamotsu Maruyama , Satoshi Okazaki
- 优先权: JP2000-037822 20000216
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.
公开/授权文献
- US20010019801A1 Photomask blank, photomask and method of manufacture 公开/授权日:2001-09-06
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