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    Phase shift mask and method of manufacture
    1.
    发明授权
    Phase shift mask and method of manufacture 有权
    相移掩模和制造方法

    公开(公告)号：US06514642B2

    公开(公告)日：2003-02-04

    申请号：US09790886

    申请日：2001-02-23

    申请人： Satoshi Okazaki ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Hideo Kaneko ,  Shinichi Kohno

    发明人： Satoshi Okazaki ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Hideo Kaneko ,  Shinichi Kohno

    IPC分类号： G03F900

    CPC分类号： G03F1/30 ,  C23C14/0057 ,  C23C14/0682 ,  Y10T428/31678

    摘要： In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

    摘要翻译： 在包括曝光透光基板和其上的第二透光区域的相移掩模中，第二透光区域用作移相器，并且由氟掺杂的硅化钼膜或氟掺杂的硅化铬膜 通过使用钼金属，铬金属，硅化钼或硅化铬作为靶的溅射技术形成，SiF2作为反应气体。 移相器对短波长曝光光具有高折射率，能够在最小膜厚度下实现180度相位变化，并且对于这种光也具有良好的稳定性。 相移掩模可用于将半导体集成电路制造成更小的最小特征尺寸和更高的集成度。

    Photomask blank and photomask
    2.
    发明授权
    Photomask blank and photomask 有权
    光掩模空白和光掩模

    公开(公告)号：US06727027B2

    公开(公告)日：2004-04-27

    申请号：US10020987

    申请日：2001-12-19

    申请人： Tetsushi Tsukamoto ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Tsutomu Shinagawa ,  Satoshi Okazaki

    发明人： Tetsushi Tsukamoto ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Tsutomu Shinagawa ,  Satoshi Okazaki

    IPC分类号： G03F900

    CPC分类号： G03F1/50 ,  G03F1/38

    摘要： In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.

    摘要翻译： 在光掩模坯料的制造中，在其上沉积有遮光膜和抗反射膜之前，在透明基板上形成含有氧，氮和/或碳的铬材料的晶种层。 种子层上的任何薄膜均按照细颗粒生长形成，因此得到的光掩模坯料具有改善的表面粗糙度，这使得能够在缺陷检查和电路图形检查的过程中进行高灵敏度检测。 通过光刻图案化光掩模坯料，制造光掩模。

    Phase shift mask and making process
    4.
    发明授权
    Phase shift mask and making process 有权
    相移掩模和制作过程

    公开(公告)号：US06352801B1

    公开(公告)日：2002-03-05

    申请号：US09573560

    申请日：2000-05-19

    申请人： Satoshi Okazaki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Yukio Inazuki

    发明人： Satoshi Okazaki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Yukio Inazuki

    IPC分类号： G03F900

    CPC分类号： G03F1/32 ,  G03F1/54

    摘要： A phase shift mask has a phase shifter formed on a substrate which is transmissive to exposure light. The phase shifter serving as a second light transmissive region is constructed of gadolinium gallium garnet. The shifter film formed under the sputtering conditions capable of restraining the generation of particles causing film defects is homogeneous, and the phase shift mask is of high precision.

    摘要翻译： 相移掩模具有形成在对曝光光透射的基板上的移相器。 作为第二透光区域的移相器由钆镓石榴石构成。 在能够抑制引起膜缺陷的颗粒的产生的溅射条件下形成的移位膜是均匀的，并且相移掩模是高精度的。

    Photomask blank, photomask and method of manufacture
    5.
    发明授权
    Photomask blank, photomask and method of manufacture 有权
    光掩模坯料，光掩模和制造方法

    公开(公告)号：US06733930B2

    公开(公告)日：2004-05-11

    申请号：US10073415

    申请日：2002-02-13

    申请人： Tsutomu Shinagawa ,  Tamotsu Maruyama ,  Hideo Kaneko ,  Mikio Kojima ,  Yukio Inazuki ,  Satoshi Okazaki

    发明人： Tsutomu Shinagawa ,  Tamotsu Maruyama ,  Hideo Kaneko ,  Mikio Kojima ,  Yukio Inazuki ,  Satoshi Okazaki

    IPC分类号： G03F900

    CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/80

    摘要： In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.

    摘要翻译： 在透明基板上包括遮光膜和抗反射膜的光掩模坯料中，遮光膜和抗反射膜由含有氧，氮和碳的铬基材料形成，使得碳含量逐步降低或 从表面侧连续地朝向基板。 可以以受控的速率蚀刻光掩模坯料以产生垂直的壁。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模具有均匀的膜性质，并且有助于具有更大密度和更精细特征尺寸的半导体IC的微细加工。

    Photomask blank, photomask and method of manufacture
    6.
    发明授权
    Photomask blank, photomask and method of manufacture 有权
    光掩模坯料，光掩模和制造方法

    公开(公告)号：US06503669B2

    公开(公告)日：2003-01-07

    申请号：US09783322

    申请日：2001-02-15

    申请人： Hideo Kaneko ,  Yukio Inazuki ,  Tamotsu Maruyama ,  Satoshi Okazaki

    发明人： Hideo Kaneko ,  Yukio Inazuki ,  Tamotsu Maruyama ,  Satoshi Okazaki

    IPC分类号： G03F900

    CPC分类号： G03F1/68 ,  C03C17/22 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/155 ,  C23C14/0057 ,  C23C14/06 ,  G03F1/50

    摘要： A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.

    摘要翻译： 光掩模坯料在透明衬底上具有至少一层铬基膜。 碳氧化铬（CrCO）或氮氧化铬碳化铬（CrCON）的铬基膜通过使用含有O，N或C的铬或铬作为靶的反应溅射技术形成，并且将二氧化碳气体和惰性气体的混合物作为 溅射气体。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模的质量在基板平面内具有高均匀性，并且在制造期间易于控制。

    Phase shift mask blank, phase shift mask, and method of manufacture
    7.
    发明授权
    Phase shift mask blank, phase shift mask, and method of manufacture 有权
    相移掩模空白，相移掩模和制造方法

    公开(公告)号：US06503668B2

    公开(公告)日：2003-01-07

    申请号：US09757615

    申请日：2001-01-11

    申请人： Yukio Inazuki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Satoshi Okazaki

    发明人： Yukio Inazuki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Satoshi Okazaki

    IPC分类号： G03F900

    CPC分类号： G03F1/32 ,  G03F1/26

    摘要： A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.

    摘要翻译： 相移掩模空白在透明基板上具有MoSiOC或MoSiONC的相移膜，并且可选地，在相移膜上具有铬基遮光膜，铬基抗反射膜或两者的多层组合。 包括通过使用含有二氧化碳的溅射气体的反应溅射技术沉积MoSi基相变膜的制造方法产生质量的相移掩模坯料和相移掩模，具有在制造过程中面内均匀性和易于控制的优点。

    Photomask blank, photomask, and method of manufacture
    9.
    发明授权
    Photomask blank, photomask, and method of manufacture 有权
    光掩模坯料，光掩模和制造方法

    公开(公告)号：US07736824B2

    公开(公告)日：2010-06-15

    申请号：US11952283

    申请日：2007-12-07

    申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Noriyasu Fukushima ,  Hideo Kaneko ,  Satoshi Okazaki

    发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Noriyasu Fukushima ,  Hideo Kaneko ,  Satoshi Okazaki

    IPC分类号： G03F1/00 ,  B32B17/10

    CPC分类号： C23C14/3492 ,  C23C14/0084 ,  C23C14/048 ,  C23C14/0676 ,  C23C14/0682 ,  C23C14/3464 ,  G03F1/32 ,  Y10T428/31616

    摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.

    摘要翻译： 一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层 和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻 速率在表面。 本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模 从其获得的相移掩模。