发明授权
- 专利标题： Magnetic memory element and magnetic memory using the same
- 专利标题（中）： 磁存储元件和使用其的磁存储器
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申请号： US09810862申请日： 2001-03-16
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公开(公告)号： US06504197B2公开(公告)日： 2003-01-07
- 发明人: Ryoji Minakata , Masashi Michijima , Hidekazu Hayashi
- 申请人： Ryoji Minakata , Masashi Michijima , Hidekazu Hayashi
- 优先权： JP2000-073590 20000316
- 主分类号： H01L2972
- IPC分类号： H01L2972
摘要：
A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an electrical characteristic that is changeable depending on an external magnetic field applied to the non-magnetic layer.
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