摘要:
A mold is disclosed, which is capable of producing a nanoimprint film without a problem of clogging of irregularities of the mold with a resin material. A method for producing the mold and a method for producing a nanoimprint film using the mold are further disclosed. In an embodiment, the mold includes: a first surface having a nanostructure including plural recesses spaced at an interval of less than 1 μm between bottom points of adjacent recesses; and at least two second surfaces substantially not having the nanostructure, wherein the first surface is coplanar with the at least two second surfaces and is positioned between two second surfaces.
摘要:
A method is provided for manufacturing a mold that has a porous alumina layer over its surface, which is capable of preventing formation of pits (recesses). A moth-eye mold manufacturing method of an embodiment of the present invention is a method for manufacturing a mold which has a porous alumina layer over its surface, including the steps of: providing a mold base which includes an aluminum base and an aluminum film deposited on a surface of the aluminum base, the aluminum film having a purity of not less than 99.99 mass %; anodizing a surface of the aluminum film to form a porous alumina layer which has a plurality of minute recessed portions; and bringing the porous alumina layer into contact with an etching solution to enlarge the plurality of minute recessed portions of the porous alumina layer.
摘要:
A method for manufacturing an anodized film according to an embodiment of the present invention includes the steps of: (a) providing a multilayer structure that includes a base, a sacrificial layer which is provided on the base and which contains aluminum, and an aluminum layer which is provided on a surface of the sacrificial layer; (b) partially anodizing the aluminum layer to form a porous alumina layer which has a plurality of minute recessed portions; and (c) after step (b), separating the porous alumina layer from the multilayer structure. According to an embodiment of the present invention, a self-supporting anodized film which includes a porous alumina layer can be manufactured more conveniently as compared with the conventional methods.
摘要:
According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.
摘要:
In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.
摘要:
An electrode structure of the present invention includes: an aluminum electrode which is to be in contact with a surface of an aluminum base; a fixing member for fixing the aluminum electrode on the surface of the aluminum base; an elastic member provided between the fixing member and the aluminum base; a lead wire which is electrically connected to the aluminum electrode at least under a certain condition; and a cover member which is tightly closed with the lead wire penetrating through an opening.
摘要:
A mold of the present invention includes: a base 12 made of glass or plastic; an inorganic underlayer 14 provided on a surface of the base 12; a buffer layer 16 provided on the inorganic underlayer 14, the buffer layer 16 containing aluminum; an aluminum layer 18a provided on a surface of the buffer layer 16; and a porous alumina layer 20 provided on a surface of the aluminum layer 18a. The porous alumina layer 20 has a plurality of recessed portions 22 whose two-dimensional size viewed in a direction normal to the surface is not less than 10 nm and less than 500 nm. The mold of the present invention has excellent adhesion between the aluminum layer and the base.
摘要:
A method is disclosed for inspecting a mold which has a porous alumina layer over its surface. The method includes providing, based on a relationship between a first parameter indicative of a thickness of the porous alumina layer and a color parameter indicative of a color of reflected light from the porous alumina layer, first color information which represents a tolerance of the first parameter of a porous alumina layer which has an uneven structure that is within a tolerance; providing a mold which is an inspection subject, the mold having a porous alumina layer over its surface; obtaining a color parameter which is indicative of a color of reflected light from the porous alumina layer of the inspection subject mold; and determining a suitability of the first parameter of the inspection subject mold based on the obtained color parameter and the first color information.
摘要:
According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.
摘要:
A method is disclosed for efficiently producing a nanoimprint film with high-accurately formed nanostructures even if a base on which the nanoimprint film is formed is capable of absorbing UV light. The production method of at least one embodiment of the present invention is a production method of a nanoimprint film formed on a base, the nanoimprint film having a surface with nanosized protrusions and recesses formed thereon. In at least one embodiment, the production method includes a first step of applying a UV-curable resin on a base containing a UV-absorbing component to form a film; a second step of irradiating the film with UV light from a top-side surface of the film to form a semi-cured film; a third step of imprinting nanosized protrusions and recesses on the semi-cured film to form a film having a surface with protrusions and recesses formed thereon; and a fourth step of curing the film with protrusions and recesses to form a nanoimprint film.