发明授权
- 专利标题: Methods for making silica crucibles
- 专利标题(中): 制造石英坩埚的方法
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申请号: US09808719申请日: 2001-03-15
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公开(公告)号: US06510707B2公开(公告)日: 2003-01-28
- 发明人: Katsuhiko Kemmochi , Takayuki Togawa , Robert Mosier , Paul Spencer
- 申请人: Katsuhiko Kemmochi , Takayuki Togawa , Robert Mosier , Paul Spencer
- 主分类号: C03B2000
- IPC分类号: C03B2000
摘要:
Silica crucibles containing an inner layer which is substantially pure and substantially bubble-free and methods for making such crucibles. The inner layer is also substantially stable against roughening and spot devitrification. The inner layer is formed by making a web structure which is then converted to a continuous layer, thereby minimizing or eliminating bubble formation. The inner layer is also formed using a gettering agent which getters alkaline and alkaline-earth elements while the inner layer is formed. The alkaline and alkaline-earth elements are gettered on an innermost portion of the inner layer which is later removed, leaving an inner layer with relatively few impurities. When used in a CZ-crystal growing process, the inner surface of the crucible remains smooth and substantially no bubbles grow in the inner layer.
公开/授权文献
- US20020166340A1 Silica crucibles and methods for making the same 公开/授权日:2002-11-14
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