公开(公告)号：US20120304762A1

公开(公告)日：2012-12-06

申请号：US13152581

申请日：2011-06-03

申请人： Caixuan XU ,  Subbanna MANJUNATH ,  Takayuki TOGAWA

发明人： Caixuan XU ,  Subbanna MANJUNATH ,  Takayuki TOGAWA

IPC分类号： G01N9/00 ,  C01B21/064 ,  B32B9/04 ,  C23C16/01 ,  C23C16/34

CPC分类号： C01B21/0643 ,  C01P2004/03 ,  C23C16/342 ,  C23C16/45523

摘要： A method for producing a pyrolytic boron nitride (PBN) article comprises introducing a nitrogen containing gas and a boron containing gas into a heated reactor furnace under temperature and pressure conditions sufficient to form a PBN deposit and pulsing the flow of the reactant gases between an on and an off state. The method provides a multi-layered PBN article that exhibits a relatively weak bonding interface between adjacent PBN layers to allow for the layers to be peeled away from one another in a controlled manner.

摘要翻译： 制备热解氮化硼（PBN）制品的方法包括在足以形成PBN沉积物的温度和压力条件下将含氮气体和含硼气体引入加热的反应炉中，并将反应气体的流动脉冲在 和关闭状态。 该方法提供了一种多层PBN制品，其在相邻的PBN层之间呈现相对较弱的结合界面，以允许层以受控的方式彼此剥离。

公开(公告)号：US20050235907A1

公开(公告)日：2005-10-27

申请号：US10523319

申请日：2003-07-30

申请人： Yasuo Ohama ,  Takayuki Togawa

发明人： Yasuo Ohama ,  Takayuki Togawa

IPC分类号： C03B20/00 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00

CPC分类号： C03B19/095 ,  C30B15/10 ,  Y02P40/57 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032

摘要： An object of the invention is to provide a quartz glass crucible reduced in the generation of vibration occurring on the surface of a silicon melt and free from the generation of rough surface and cristobalite spots, yet capable of pulling up single crystal silicon stably and at high yield even in long-term operations; it is also an object to provide a method for producing the same. In a quartz glass crucible for pulling up single crystal silicon comprising a crucible base body having a bottom part and a straight shell part with an inner layer provided to the inner surface thereof, the quartz glass crucible is characterized by that said inner layer comprises a synthetic quartz glass layer from the lowest end to at least a height of 0.25 H; a naturally occurring quartz glass layer or a mixed layer of naturally occurring quartz glass and synthetic quartz glass extended in a range of from at least 0.5 H to 0.8 H; and one selected from a synthetic quartz glass layer, a naturally occurring quartz glass layer, and a mixed quartz glass layer of naturally and synthetic quartz glass for the rest of the inner layer, wherein H represents the height from the lowest end of the bottom part to the upper end plane of the shell part. It also provides a method for producing the quartz glass crucible above.

摘要翻译： 本发明的目的是提供一种石英玻璃坩埚，其减少了在硅熔体表面产生的振动，并且不产生粗糙的表面和方英石点，而且能够稳定且高地提取单晶硅 即使在长期经营中也能获得收益; 也是提供一种制造该方法的目的。 在用于提拉单晶硅的石英玻璃坩埚中，包括具有底部的坩埚基体和设置在其内表面的内层的直壳部，石英玻璃坩埚的特征在于，所述内层包括合成 石英玻璃层从最低端到至少高度为0.25H; 天然存在的石英玻璃层或天然存在的石英玻璃和合成石英玻璃的混合层在至少0.5H至0.8H的范围内延伸; 选自合成石英玻璃层，天然石英玻璃层和天然和合成石英玻璃的混合石英玻璃，用于内层的其余部分，其中H表示从底部的最下端的高度 到壳部分的上端平面。 还提供了上述石英玻璃坩埚的制造方法。

公开(公告)号：US07686887B2

公开(公告)日：2010-03-30

申请号：US10523319

申请日：2003-07-30

申请人： Yasuo Ohama ,  Takayuki Togawa

发明人： Yasuo Ohama ,  Takayuki Togawa

IPC分类号： C30B15/10 ,  F27B14/10 ,  C03B11/00 ,  C03B15/00 ,  C03B19/01

CPC分类号： C03B19/095 ,  C30B15/10 ,  Y02P40/57 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032

摘要： An object of the invention is to provide a quartz glass crucible reduced in the generation of vibration occurring on the surface of a silicon melt and free from the generation of rough surface and cristobalite spots, yet capable of pulling up single crystal silicon stably and at high yield even in long-term operations; it is also an object to provide a method for producing the same. In a quartz glass crucible for pulling up single crystal silicon comprising a crucible base body having a bottom part and a straight shell part with an inner layer provided to the inner surface thereof, the quartz glass crucible is characterized by that said inner layer comprises a synthetic quartz glass layer from the lowest end to at least a height of 0.25 H; a naturally occurring quartz glass layer or a mixed layer of naturally occurring quartz glass and synthetic quartz glass extended in a range of from at least 0.5 H to 0.8 H; and one selected from a synthetic quartz glass layer, a naturally occurring quartz glass layer, and a mixed quartz glass layer of naturally and synthetic quartz glass for the rest of the inner layer; wherein H represents the height from the lowest end of the bottom part to the upper end plane of the shell part. It also provides a method for producing the quartz glass crucible above.

摘要翻译： 本发明的目的是提供一种石英玻璃坩埚，其减少了在硅熔体表面产生的振动，并且不产生粗糙的表面和方英石点，而且能够稳定且高地提取单晶硅 即使在长期经营中也能产生; 也是提供一种制造该方法的目的。 在用于提拉单晶硅的石英玻璃坩埚中，包括具有底部的坩埚基体和设置在其内表面的内层的直壳部，石英玻璃坩埚的特征在于，所述内层包括合成 石英玻璃层从最低端到至少高度为0.25H; 天然存在的石英玻璃层或天然存在的石英玻璃和合成石英玻璃的混合层在至少0.5H至0.8H的范围内延伸; 选自合成石英玻璃层，天然石英玻璃层和天然和合成石英玻璃的混合石英玻璃，用于内层的其余部分; 其中H表示从壳部分的底部的最下端到上端平面的高度。 还提供了上述石英玻璃坩埚的制造方法。

公开(公告)号：US07299658B2

公开(公告)日：2007-11-27

申请号：US10559086

申请日：2004-05-21

申请人： Yasuo Ohama ,  Takayuki Togawa ,  Shigeo Mizuno

发明人： Yasuo Ohama ,  Takayuki Togawa ,  Shigeo Mizuno

IPC分类号： C03B11/08 ,  C30B35/00

CPC分类号： C03B19/095 ,  C03B2201/03 ,  C30B15/10 ,  Y02P40/57 ,  Y10S65/08 ,  Y10S117/90 ,  Y10T117/10

摘要： A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.

摘要翻译： 一种用于拉起单晶硅的石英玻璃坩埚，其中至少在其弯曲部分中具有由合成石英玻璃构成的具有低Al浓度的透明内层的三层结构， 透明或不透明的中间层由天然石英玻璃或天然和合成石英玻璃的混合物组成，具有高Al浓度，不透明的外层由天然石英玻璃组成，Al浓度高于 中间层。 石英玻璃坩埚在透明内层的变形中减少，并且抑制与单晶上拉相关联的石英玻璃坩埚的溶解量的变化，并且实现均匀的氧浓度 在单晶的纵向上。

公开(公告)号：US07074731B2

公开(公告)日：2006-07-11

申请号：US10440429

申请日：2003-05-16

申请人： Yasuo Ohama ,  Takayuki Togawa

发明人： Yasuo Ohama ,  Takayuki Togawa

IPC分类号： C03C3/06

CPC分类号： C03C1/026 ,  C03B19/095 ,  C03B19/1095 ,  C03B2201/21 ,  C03C2201/21 ,  C30B15/10 ,  Y10T117/10

摘要： It is an object of the present invention to provide a hydrogen-doped silica powder that is useful in the formation of a quartz glass crucible that is capable of pulling a silicon single crystal without causing a state having dislocations in the silicon single crystal due to peeling of quartz glass segment. It is a further object of the invention to provide a quartz glass crucible for use in pulling a silicon single crystal whose inner surface is formed by use of the hydrogen-doped silica powder and a producing method of the silica powder.In order to achieve the objects above, the present invention provides a hydrogen-doped silica powder for use in producing a quartz glass crucible for use in pulling a silicon single crystal, wherein the silica powder is made of synthetic silica powder, natural silica powder or a mixture thereof, with a hydrogen concentration being in the range of 1×1017 to 5×1019 molecules/cm3, and a producing method thereof, and a quartz glass crucible for pulling a silicon single crystal whose inner surface is made of the silica powders.

摘要翻译： 本发明的目的是提供一种可用于形成石英玻璃坩埚的氢掺杂二氧化硅粉末，其能够拉伸硅单晶而不引起由于剥离而在硅单晶中具有位错的状态 的石英玻璃片段。 本发明的另一个目的是提供一种用于拉动其内表面使用掺氢二氧化硅粉末形成的硅单晶的石英玻璃坩埚和二氧化硅粉末的制造方法。 为了实现上述目的，本发明提供一种用于制造用于拉制硅单晶的石英玻璃坩埚的氢掺杂二氧化硅粉末，其中二氧化硅粉末由合成二氧化硅粉末，天然二氧化硅粉末或 其浓度在1×10 17至5×10 19分子/ cm 3的范围内的混合物及其制备方法， 以及用于拉出其内表面由二氧化硅粉末制成的单晶硅的石英玻璃坩埚。

公开(公告)号：US20060144327A1

公开(公告)日：2006-07-06

申请号：US10559086

申请日：2004-05-21

申请人： Yasuo Ohama ,  Takayuki Togawa ,  Shigeo Mizuno

发明人： Yasuo Ohama ,  Takayuki Togawa ,  Shigeo Mizuno

IPC分类号： C30B11/00

CPC分类号： C03B19/095 ,  C03B2201/03 ,  C30B15/10 ,  Y02P40/57 ,  Y10S65/08 ,  Y10S117/90 ,  Y10T117/10

摘要： A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.

摘要翻译： 一种用于拉起单晶硅的石英玻璃坩埚，其中至少在其弯曲部分中具有由合成石英玻璃构成的具有低Al浓度的透明内层的三层结构， 透明或不透明的中间层由天然石英玻璃或天然和合成石英玻璃的混合物组成，具有高的Al浓度，不透明的外层由天然石英玻璃组成，Al浓度高于 中间层。 石英玻璃坩埚在透明内层的变形中减少，并且抑制与单晶上拉相关联的石英玻璃坩埚的溶解量的变化，并且实现均匀的氧浓度 在单晶的纵向上。

公开(公告)号：US20060096946A1

公开(公告)日：2006-05-11

申请号：US11262279

申请日：2005-10-28

申请人： Marc Schaepkens ,  Takayuki Togawa

发明人： Marc Schaepkens ,  Takayuki Togawa

IPC分类号： H01B13/00 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

摘要： A wafer processing device for use in semiconductor wafer processing applications as an Electro-Static Chuck (ESC) comprising a graphite substrate and at least one electrode pattern, wherein the grooves in the electrode pattern are filled with insulating or semiconducting material selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and/or combinations thereof, forming a substantially planar surface. The substantially planar surface is then coated with at least a semiconducting layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and/or combinations thereof.

摘要翻译： 一种晶片处理装置，用于半导体晶片处理应用中，作为包含石墨基片和至少一个电极图案的静电卡盘（ESC），其中电极图案中的凹槽填充有绝缘或半导体材料，绝缘或半导体材料选自 B，Al，Si，Ga，难熔硬金属，过渡金属和稀土金属，或其复合物和/或其组合，形成基本平坦的表面。 然后用至少一个半导体层涂覆基本平坦的表面，该半导体层包括选自由B，Al，Si，Ga，耐火硬金属，过渡金属和过渡金属组成的组中的元素的氮化物，碳化物，碳氮化物或氮氧化物中的至少一种 稀土金属或其配合物和/或其组合。

公开(公告)号：US06510707B2

公开(公告)日：2003-01-28

申请号：US09808719

申请日：2001-03-15

申请人： Katsuhiko Kemmochi ,  Takayuki Togawa ,  Robert Mosier ,  Paul Spencer

发明人： Katsuhiko Kemmochi ,  Takayuki Togawa ,  Robert Mosier ,  Paul Spencer

IPC分类号： C03B2000

CPC分类号： C30B15/10 ,  C03B19/095

摘要： Silica crucibles containing an inner layer which is substantially pure and substantially bubble-free and methods for making such crucibles. The inner layer is also substantially stable against roughening and spot devitrification. The inner layer is formed by making a web structure which is then converted to a continuous layer, thereby minimizing or eliminating bubble formation. The inner layer is also formed using a gettering agent which getters alkaline and alkaline-earth elements while the inner layer is formed. The alkaline and alkaline-earth elements are gettered on an innermost portion of the inner layer which is later removed, leaving an inner layer with relatively few impurities. When used in a CZ-crystal growing process, the inner surface of the crucible remains smooth and substantially no bubbles grow in the inner layer.

摘要翻译： 含有基本纯净且基本上无气泡的内层的二氧化硅坩埚以及制造这种坩埚的方法。 内层对于粗糙化和斑点失透也基本稳定。 内层通过制造网状结构形成，然后将其转化为连续层，从而最小化或消除气泡形成。 内层还使用吸附碱性和碱土元素的吸气剂形成，同时内层形成。 碱性和碱土元素在内层的最内部被吸收，后来被去除，留下相对较少杂质的内层。 当用于CZ晶体生长工艺时，坩埚的内表面保持平滑，并且在内层中基本上没有气泡生长。