发明授权
- 专利标题: Method of producing a micromechanical structure for a micro-electromechanical element
- 专利标题(中): 微机电元件的微机械结构的制造方法
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申请号: US09868402申请日: 2001-09-12
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公开(公告)号: US06518084B1公开(公告)日: 2003-02-11
- 发明人: Stefan Seitz , Leonhard Hoefter , Juergen Kruckow , Karl Neumeier , Dieter Bollmann
- 申请人: Stefan Seitz , Leonhard Hoefter , Juergen Kruckow , Karl Neumeier , Dieter Bollmann
- 优先权: DE19857741 19981215; DE19927971 19990618
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
In a method of producing a micromechanical structure for a micro-electromechanical element, a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is then connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. Finally, one of the wafers is thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity. At least one further intermediate layer is provided between the two semiconductor wavers which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.
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