发明授权
- 专利标题: Plasma reactor with dry clean apparatus and method
- 专利标题(中): 具有干洗装置和方法的等离子体反应器
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申请号: US09470560申请日: 1999-12-23
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公开(公告)号: US06518190B1公开(公告)日: 2003-02-11
- 发明人: Thorsten Lill , Jeffrey D. Chinn
- 申请人: Thorsten Lill , Jeffrey D. Chinn
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A preferred embodiment of the plasma reactor of the present invention provides a chamber adapted to process a workpiece having at least one wall capable of allowing inductive power coupling into the reactor chamber. A source power antenna, capable of generating a processing plasma, confronts a portion of the at least one wall. A dry clean antenna is located adjacent the chamber beside a portion of the at least one wall not confronted by the source power antenna. During workpiece processing, the dry clean antenna preferably has essentially a floating potential. After workpiece processing has ceased, a dry clean plasma may be generated by inductive coupling using the dry clean antenna. Embodiments of the present invention allow dry clean plasma characteristics to be optimized to improve dry clean effectiveness. The source power antenna also may couple power to the dry clean plasma, preferably in parallel with the dry clean antenna. With such embodiments, the source power antenna may be operated so that it couples less power to the dry clean plasma, while the dry clean antenna couples more. This allows sputtering of the chamber wall under the source power antenna to be reduced and allows more effective removal of accumulated deposits.
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