公开(公告)号：US06518190B1

公开(公告)日：2003-02-11

申请号：US09470560

申请日：1999-12-23

申请人： Thorsten Lill ,  Jeffrey D. Chinn

发明人： Thorsten Lill ,  Jeffrey D. Chinn

IPC分类号： H01L2100

CPC分类号： H01J37/32862 ,  H01J37/321

摘要： A preferred embodiment of the plasma reactor of the present invention provides a chamber adapted to process a workpiece having at least one wall capable of allowing inductive power coupling into the reactor chamber. A source power antenna, capable of generating a processing plasma, confronts a portion of the at least one wall. A dry clean antenna is located adjacent the chamber beside a portion of the at least one wall not confronted by the source power antenna. During workpiece processing, the dry clean antenna preferably has essentially a floating potential. After workpiece processing has ceased, a dry clean plasma may be generated by inductive coupling using the dry clean antenna. Embodiments of the present invention allow dry clean plasma characteristics to be optimized to improve dry clean effectiveness. The source power antenna also may couple power to the dry clean plasma, preferably in parallel with the dry clean antenna. With such embodiments, the source power antenna may be operated so that it couples less power to the dry clean plasma, while the dry clean antenna couples more. This allows sputtering of the chamber wall under the source power antenna to be reduced and allows more effective removal of accumulated deposits.

摘要翻译： 本发明的等离子体反应器的一个优选实施例提供了适于处理工件的室，该工件具有至少一个能够将感应功率耦合到反应器室中的壁。 能够产生处理等离子体的源功率天线面对至少一个壁的一部分。 干净的天线位于与源功率天线不相对的至少一个壁的一部分旁边的室附近。 在工件加工过程中，干式天线优选具有基本的浮动电位。 在工件处理停止之后，可以通过使用干式天线的电感耦合来产生干净的等离子体。 本发明的实施例允许优化干洗等离子体特性以改善干洗效果。 源功率天线还可以将功率耦合到干洗等离子体，优选地与干净的天线并联。 通过这样的实施例，源功率天线可以被操作，使得它将更少的功率耦合到干净的等离子体，而干净的天线更多耦合。 这允许在源功率天线下方的室壁的溅射被减少并且允许更有效地去除积累的沉积物。

公开(公告)号：US09725805B2

公开(公告)日：2017-08-08

申请号：US11445706

申请日：2006-06-02

申请人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC分类号： C23C16/448 ,  C23C16/455 ,  B05D1/00 ,  B82Y30/00 ,  B05D3/14

CPC分类号： C23C16/45557 ,  B05D1/60 ,  B05D3/142 ,  B82Y30/00 ,  C23C16/4485 ,  C23C16/45561

摘要： A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

公开(公告)号：US07638167B2

公开(公告)日：2009-12-29

申请号：US10862047

申请日：2004-06-04

申请人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC分类号： C23C16/00 ,  C23C14/10

CPC分类号： B82Y30/00 ,  C23C16/0227 ,  C23C16/402

摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

公开(公告)号：US06900133B2

公开(公告)日：2005-05-31

申请号：US10247467

申请日：2002-09-18

申请人： Jeffrey D. Chinn ,  Michael B. Rattner ,  James A. Cooper ,  Rolf A. Guenther

发明人： Jeffrey D. Chinn ,  Michael B. Rattner ,  James A. Cooper ,  Rolf A. Guenther

IPC分类号： B81C1/00 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/302

CPC分类号： B81C1/00626 ,  B81B2201/0214 ,  B81B2201/058 ,  B81C99/009 ,  B81C2201/0132 ,  H01L21/3065 ,  H01L21/3081

摘要： Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.

摘要翻译： 本文公开了一种在晶体衬底（例如单晶硅衬底）中对不同深度蚀刻特征的易于且良好集成的方法。 该方法利用专门的掩蔽过程并利用高选择性蚀刻工艺。 该方法提供了一个互连的，可变深度的储层和通道的系统。 用于蚀刻通道的等离子体可以设计成提供约200nm或更小的侧壁粗糙度。 所得结构可用于各种MEMS应用，包括用于半导体应用的生物医学MEMS和MEMS。

公开(公告)号：US06887732B2

公开(公告)日：2005-05-03

申请号：US09850951

申请日：2001-05-07

申请人： Vidyut Gopal ,  Jeffrey D. Chinn

发明人： Vidyut Gopal ,  Jeffrey D. Chinn

IPC分类号： B81B3/00 ,  H01L21/00

CPC分类号： B81C1/00166 ,  B81B2203/0118

摘要： Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device are described. According to one aspect, a microstructure device includes: a semiconductive substrate; a monolithic microstructure device feature coupled with the semiconductive substrate, and wherein at least a portion of the microstructure device feature is configured to move relative to the semiconductive substrate; and a conductive structure provided directly upon the microstructure device feature.

摘要翻译： 描述微结构器件，形成微结构器件的方法和形成MEMS器件的方法。 根据一个方面，微结构器件包括：半导体衬底; 与所述半导体衬底耦合的单片微结构器件特征，并且其中所述微结构器件特征的至少一部分被配置为相对于所述半导体衬底移动; 以及直接设置在微结构器件特征上的导电结构。

公开(公告)号：US06830950B2

公开(公告)日：2004-12-14

申请号：US10300970

申请日：2002-11-20

申请人： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

发明人： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

IPC分类号： H01L2100

CPC分类号： B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

摘要： Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

摘要翻译： 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

公开(公告)号：US06599842B2

公开(公告)日：2003-07-29

申请号：US09450475

申请日：1999-11-29

申请人： John Chao ,  Mohit Jain ,  Jeffrey D. Chinn

发明人： John Chao ,  Mohit Jain ,  Jeffrey D. Chinn

IPC分类号： H01L21302

CPC分类号： H01L21/67069 ,  H01L21/3065

摘要： A method for processing a substrate disposed in a substrate processing chamber to modify the contour of a trench formed on the substrate. The substrate processing chamber is the type that has a coil and a plasma generation system including a source power system operatively coupled to the coil and a bias power system operatively coupled to the substrate process chamber. The method includes transferring the substrate into the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a first process gas consisting essentially of a sputtering agent by applying RF energy from the source power system to the coil. The plasma is biased toward the substrate by applying bias power to the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a second process gas without applying bias power or applying minimal bias power to the substrate process chamber.

摘要翻译： 一种用于处理设置在基板处理室中以改变形成在基板上的沟槽的轮廓的基板的方法。 衬底处理室是具有线圈和等离子体产生系统的类型，其包括可操作地耦合到线圈的源电力系统和可操作地耦合到衬底处理室的偏置电力系统。 该方法包括将衬底转移到衬底处理室中。 此后，通过将来自源电力系统的RF能量施加到线圈，将衬底暴露于由基本上由溅射剂组成的第一工艺气体形成的等离子体。 通过向衬底处理室施加偏置功率将等离子体偏压到衬底。 此后，将衬底暴露于由第二工艺气体形成的等离子体，而不施加偏置功率或向衬底处理室施加最小的偏置功率。

公开(公告)号：US08178162B2

公开(公告)日：2012-05-15

申请号：US12592183

申请日：2009-11-19

申请人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC分类号： C23C16/00

CPC分类号： B82Y30/00 ,  C23C16/0227 ,  C23C16/402

摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

公开(公告)号：US07695775B2

公开(公告)日：2010-04-13

申请号：US11295129

申请日：2005-12-05

申请人： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak

发明人： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak

IPC分类号： H05H1/00 ,  B05D3/04 ,  B05D3/10 ,  B05D3/06

CPC分类号： B05D1/60 ,  B05D3/064 ,  B82Y30/00

摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane substrate surface is treated using a combination of ozone and UV radiation to render the siloxane surface more hydrophilic, and subsequently a functional coating is applied in-situ over the treated surface of the siloxane substrate.

摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物功能装置，生物MEMS装置以及制造用于生物应用的微流体装置。 在一个重要的实施方案中，使用臭氧和UV辐射的组合处理硅氧烷底物表面，以使硅氧烷表面更亲水，随后在硅氧烷底物的处理表面上原位施加功能性涂层。

公开(公告)号：US20100068489A1

公开(公告)日：2010-03-18

申请号：US12150249

申请日：2008-04-24

申请人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

发明人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

IPC分类号： B32B5/00 ,  B32B9/00 ,  B05D5/12 ,  B28B7/38

CPC分类号： C23C16/403 ,  B81B3/0075 ,  B81C99/0085 ,  B81C2201/0153 ,  B81C2201/112 ,  C23C16/405 ,  C23C16/45525

摘要： The carbon-doped metal oxide films described provide a low coefficient of friction, typically ranging from about 0.05 to about 0.4. Applied over a silicon substrate, for example, the carbon-doped metal oxide films provide anti-stiction properties, where the measured work of adhesion for a coated MEMS cantilever beam is less than 10 μJ/m2. The films provide unexpectedly low water vapor transmission. In addition, the carbon-doped metal oxide films are excellent when used as a surface release coating for nanoimprint lithography. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

摘要翻译： 所述的碳掺杂的金属氧化物膜提供低摩擦系数，通常为约0.05至约0.4。 施加在硅衬底上，例如，碳掺杂的金属氧化物膜提供抗静电性质，其中测量的涂覆的MEMS悬臂梁的粘附力小于10μJ/ m 2。 这些膜提供了意想不到的低水蒸汽传输。 此外，当用作纳米压印光刻的表面剥离涂层时，碳掺杂的金属氧化物膜是优异的。 碳掺杂的金属氧化物膜中的碳含量为约5原子％至约20原子％。