发明授权
US06521931B2 Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme
有权
采用间隔物容纳方案的自对准磁致结构随机存取存储器（MRAM）结构
- 专利标题： Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme
- 专利标题（中）： 采用间隔物容纳方案的自对准磁致结构随机存取存储器（MRAM）结构
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申请号： US10040447申请日： 2002-01-09
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公开(公告)号： US06521931B2公开(公告)日： 2003-02-18
- 发明人: Gurtej Sandhu , Roger Lee , Dennis Keller , Trung T. Doan , Max F. Hineman , Ren Earl
- 申请人： Gurtej Sandhu , Roger Lee , Dennis Keller , Trung T. Doan , Max F. Hineman , Ren Earl
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
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