- 专利标题： NAND type flash memory device having dummy region
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申请号： US09995501申请日： 2001-11-26
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公开(公告)号： US06528841B2公开(公告)日： 2003-03-04
- 发明人: Eun-Young Choi , Jung-Dal Choi , Jae-Duk Lee , Hong-Soo Kim
- 申请人： Eun-Young Choi , Jung-Dal Choi , Jae-Duk Lee , Hong-Soo Kim
- 优先权： KR2001-1102 20010109
- 主分类号： H01L29788
- IPC分类号： H01L29788
摘要：
A NAND type flash memory device has a dummy region forming a dummy pattern. In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells.
公开/授权文献
- US20020096705A1 NAND type flash memory device having dummy region 公开/授权日：2002-07-25
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