- 专利标题: Semiconductor memory device
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申请号: US09789514申请日: 2001-02-22
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公开(公告)号: US06529439B2公开(公告)日: 2003-03-04
- 发明人: Toshiya Uchida , Kota Hara , Shinya Fujioka
- 申请人: Toshiya Uchida , Kota Hara , Shinya Fujioka
- 优先权: JP2000-047116 20000224
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
A semiconductor memory device includes isolation circuits disconnecting cell arrays from sense amplifiers, and isolation signal generating circuits generating isolation signals that control the isolation circuits. The isolation signal generating circuits are hierarchically divided into main isolation signal generating circuits and sub isolation signal generating circuits. The sub isolation signal generating circuits generate sub isolation signals having a first potential on a high-potential side. The main isolation signal generating circuits generate main isolation signals having a second potential on the high-potential side, the second potential being lower than the first potential.
公开/授权文献
- US20010017813A1 Semiconductor memory device 公开/授权日:2001-08-30