发明授权
- 专利标题： High speed low voltage semiconductor devices and method of fabrication
- 专利标题（中）： 高速低压半导体器件及其制造方法
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申请号： US09630463申请日： 2000-08-02
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公开(公告)号： US06537867B1公开(公告)日： 2003-03-25
- 发明人: Ronald L. Freyman , Isik C. Kizilyalli , Ross A. Kohler , Omkaram Nalamasu , Mark R. Pinto , Joseph R. Radosevich , Robert M. Vella , George P. Watson
- 申请人： Ronald L. Freyman , Isik C. Kizilyalli , Ross A. Kohler , Omkaram Nalamasu , Mark R. Pinto , Joseph R. Radosevich , Robert M. Vella , George P. Watson
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A digit signal processor capable of operating at 100 MHZ with a 1.0 volt power supply. The digital signal processor is fabricated by application of strong phase-shift lithography to obtain a 0.12 &mgr;m gate dimension. A dual-mask process is utilized to improve resolution thereby producing high speed, low-voltage processors. A n+/p+ dual-Poly:Si module, and dopant penetration suppression techniques may be utilized.