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    Process for fabricating article comprising photonic band gap material
    2.
    发明授权
    Process for fabricating article comprising photonic band gap material 有权
    制造包含光子带隙材料的制品的方法

    公开(公告)号：US06392787B1

    公开(公告)日：2002-05-21

    申请号：US09653916

    申请日：2000-09-01

    申请人： Raymond A. Cirelli ,  Omkaram Nalamasu ,  Sanjay Patel ,  Stanley Pau ,  George P Watson ,  Christopher Alan White ,  Robert Waverly Zehner

    发明人： Raymond A. Cirelli ,  Omkaram Nalamasu ,  Sanjay Patel ,  Stanley Pau ,  George P Watson ,  Christopher Alan White ,  Robert Waverly Zehner

    IPC分类号： G02F100

    CPC分类号： G02B6/1225 ,  B82Y20/00

    摘要： An improved lithographic process for fabricating articles comprising photonic band gap materials with micron-scale periodicities is provided, the process readily capable of being performed by current lithographic processes and equipment. The process involves providing a three-dimensional structure made up of a plurality of stacked layers, where each layer contains a substantially planar lattice of shapes of a first material, typically silicon, with interstices between the shapes. Each shape contacts at least one shape of an adjacent layer, the interstices throughout the plurality of layers are interconnected, and the interstices comprise a second material, e.g., silicon dioxide. Typically, the second material is etched from the interconnected interstices to provide a structure of the first material and air, this structure designed to provide a particular photonic band gap.

    摘要翻译： 提供了用于制造包含具有微米级周期性的光子带隙材料的制品的改进的光刻工艺，该工艺容易地由当前的光刻工艺和设备执行。 该方法包括提供由多个堆叠层组成的三维结构，其中每个层包含具有在形状之间的间隙的第一材料（通常为硅）的基本上平面的形状的格子。 每个形状接触相邻层的至少一个形状，整个多个层中的间隙互连，并且间隙包括第二材料，例如二氧化硅。 通常，第二材料从互连的间隙中蚀刻以提供第一材料和空气的结构，该结构被设计成提供特定的光子带隙。

    3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques
    3.
    发明授权
    3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques 有权
    通过引发化学气相沉积技术的电池和超级电容器制造的3D方法

    公开(公告)号：US08603195B2

    公开(公告)日：2013-12-10

    申请号：US12858531

    申请日：2010-08-18

    申请人： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

    发明人： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

    IPC分类号： H01M4/13 ,  H01M4/58 ,  H01M4/60 ,  H01M4/82 ,  H01M6/12 ,  H01M6/46 ,  B05D5/12

    CPC分类号： H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

    摘要： Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

    摘要翻译： 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

    METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES
    5.
    发明申请
    METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES 有权
    用于执行多个光电层发展和蚀刻过程的方法和装置

    公开(公告)号：US20120322011A1

    公开(公告)日：2012-12-20

    申请号：US13455784

    申请日：2012-04-25

    申请人： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    发明人： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    IPC分类号： G03F7/36

    CPC分类号： G03F7/36 ,  G03F7/40

    摘要： The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

    摘要翻译： 本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。 在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物， 通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

    MATERIALS AND DEVICE STACK FOR MARKET VIABLE ELECTROCHROMIC DEVICES
    6.
    发明申请
    MATERIALS AND DEVICE STACK FOR MARKET VIABLE ELECTROCHROMIC DEVICES 有权
    市场上可见的电致发光器件的材料和器件堆叠

    公开(公告)号：US20120218621A1

    公开(公告)日：2012-08-30

    申请号：US13501994

    申请日：2010-10-22

    申请人： Byung Sung Leo Kwak ,  Kaushal K. Singh ,  Joseph G. Gordon, II ,  Omkaram Nalamasu

    发明人： Byung Sung Leo Kwak ,  Kaushal K. Singh ,  Joseph G. Gordon, II ,  Omkaram Nalamasu

    IPC分类号： G02F1/153 ,  C23C16/453 ,  H05H1/24

    CPC分类号： G02F1/1523 ,  C23C14/08 ,  C23C14/34 ,  G02F1/1525 ,  G02F2202/06 ,  Y10S359/90

    摘要： The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.

    摘要翻译： 本发明一般涉及电致变色（EC）装置，例如用于电致变色窗（ECW））及其制造。 EC装置可以包括透明基板; 第一透明导电层; 掺杂着色层，其中着色层掺杂剂为着色层中的原子排列提供结构稳定性; 电解质层; 在所述电解质层上的掺杂阳极层，其中所述阳极层掺杂剂在所述掺杂阳极层中提供增加的导电性; 和第二透明导电层。 制造电致变色器件的方法可以包括依次沉积在第一透明导电层，掺杂着色层，电解质层，掺杂阳极层和第二透明导电层的衬底上，其中至少一个 掺杂着色层，电解质层和掺杂阳极层使用组合等离子体沉积工艺溅射沉积。

    high power, high energy and large area energy storage devices
    9.
    发明申请
    high power, high energy and large area energy storage devices 审中-公开
    大功率，高能量和大面积储能装置

    公开(公告)号：US20100261049A1

    公开(公告)日：2010-10-14

    申请号：US12422739

    申请日：2009-04-13

    申请人： BYUNG-SUNG LEO KWAK ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Kaushal K. Singh ,  Steven Verhaverbeke

    发明人： BYUNG-SUNG LEO KWAK ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Kaushal K. Singh ,  Steven Verhaverbeke

    IPC分类号： H01M6/46 ,  H01M6/00

    CPC分类号： H01M10/0436 ,  H01G9/0029 ,  H01G9/012 ,  H01G9/15 ,  H01M10/052 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

    摘要： A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode. Furthermore, an energy storage device may include a plurality of thin film cells formed on a single substrate, the plurality of cells being electrically connected in a network, the network including both parallel and serial electrical connections between individual cells of the plurality of cells.

    摘要翻译： 描述了容易制造的大功率，高能量，大面积的储能装置。 能量存储装置可以使用与大面积加工工具兼容的工艺，例如与柔性薄膜基板兼容的大面积涂覆系统和线性处理系统。 储能装置可以包括电池，超级电容器和超电容器。 能量存储装置可以包括形成在单个基板上的多个薄膜单元，多个单元串联电连接，多个单元中的每一个包括：基板表面上的集电器; 集电器上的第一电极; 第一电极上的第二电极; 以及在第一电极和第二电极之间的电解质层。 此外，能量存储装置可以包括形成在单个基板上的多个薄膜单元，所述多个单元电连接在网络中，所述网络包括多个单元中各个单元之间的并联和串联电连接。

    PROCESS TOOL INCLUDING PLASMA SPRAY FOR CARBON NANOTUBE GROWTH
    10.
    发明申请
    PROCESS TOOL INCLUDING PLASMA SPRAY FOR CARBON NANOTUBE GROWTH 审中-公开
    工艺工具，包括碳纳米管生长等离子喷涂

    公开(公告)号：US20100075060A1

    公开(公告)日：2010-03-25

    申请号：US12236739

    申请日：2008-09-24

    申请人： PRAVIN NARWANKAR ,  Victor Pushparaj ,  Omkaram Nalamasu

    发明人： PRAVIN NARWANKAR ,  Victor Pushparaj ,  Omkaram Nalamasu

    IPC分类号： C23C4/04

    CPC分类号： H01L31/1804 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C23C4/02 ,  C23C4/12 ,  C23C4/123 ,  C23C4/134 ,  C23C16/54 ,  H01L31/035254 ,  Y02E10/547 ,  Y02P70/521

    摘要： This invention provides a high volume manufacturing compatible process tool and method for integrating deposition of carbon nanotubes into device fabrication. A linear process tool for growing carbon nanotubes comprises a linear conveyor for moving a substrate through the linear process tool and a micro-plasma process unit including a plurality of micro-plasma spray guns arranged in an array, the micro-plasma process unit being positioned above the linear conveyor and configured to deposit material on the surface of the substrate as the substrate passes under the micro-plasma process unit on the linear conveyor. The micro-plasma process unit may include a first array of micro-plasma spray guns for depositing a catalyst material and a second array of micro-plasma spray guns for depositing the carbon nanotubes. A method of depositing carbon nanotubes on a substrate comprises: supplying a first precursor for a catalyst material to a first array of micro-plasma spray guns; creating a first plasma using the first array of micro-plasma spray guns and the first precursor; moving the substrate through the first plasma; activating the catalyst material; supplying a second precursor for the carbon nanotubes to a second array of micro-plasma spray guns; creating a second plasma using the second array of micro-plasma spray guns and the second precursor; moving the substrate through the second plasma.

    摘要翻译： 本发明提供了用于将碳纳米管的沉积集成到器件制造中的大体积制造兼容的工艺工具和方法。 用于生长碳纳米管的线性工艺工具包括用于通过线性工艺工具移动衬底的线性输送机和包括排列成阵列的多个微等离子体喷枪的微等离子体处理单元，微等离子体处理单元被定位 在线性输送机之上，并且被配置成当基板通过在线性输送机上的微等离子体处理单元下方时将材料沉积在基板的表面上。 微等离子体处理单元可以包括用于沉积催化剂材料的第一阵列的微等离子体喷枪和用于沉积碳纳米管的微等离子体喷枪的第二阵列。 将碳纳米管沉积在基底上的方法包括：向第一阵列的微等离子体喷枪提供用于催化剂材料的第一前体; 使用第一阵列的微等离子喷枪和第一前体产生第一等离子体; 使衬底移动通过第一等离子体; 活化催化剂材料; 将第二碳纳米管前体供应到第二阵列的微等离子体喷枪; 使用第二阵列的微等离子体喷枪和第二前体产生第二等离子体; 使衬底移动通过第二等离子体。