摘要:
An improved lithographic process for fabricating articles comprising photonic band gap materials with micron-scale periodicities is provided, the process readily capable of being performed by current lithographic processes and equipment. The process involves providing a three-dimensional structure made up of a plurality of stacked layers, where each layer contains a substantially planar lattice of shapes of a first material, typically silicon, with interstices between the shapes. Each shape contacts at least one shape of an adjacent layer, the interstices throughout the plurality of layers are interconnected, and the interstices comprise a second material, e.g., silicon dioxide. Typically, the second material is etched from the interconnected interstices to provide a structure of the first material and air, this structure designed to provide a particular photonic band gap.
摘要:
The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.
摘要:
Integrated lenses are fabricated on LED devices by chemical etching mesas through mask openings which are non-circular. The mask is removed and the mesas are then etched to form spherical lenses.
摘要:
A digit signal processor capable of operating at 100 MHZ with a 1.0 volt power supply. The digital signal processor is fabricated by application of strong phase-shift lithography to obtain a 0.12 &mgr;m gate dimension. A dual-mask process is utilized to improve resolution thereby producing high speed, low-voltage processors. A n+/p+ dual-Poly:Si module, and dopant penetration suppression techniques may be utilized.
摘要翻译:一个数字信号处理器能够以1.0伏的电源工作在100MHZ。 数字信号处理器是通过应用强相移光刻技术制造的,以获得0.12μm的门尺寸。 利用双掩模工艺来提高分辨率,从而产生高速,低电压处理器。 可以使用n + / p +双Poly:Si模块和掺杂剂渗透抑制技术。
摘要:
Methods and apparatus are provided for compressed imaging by performing modulation in a pupil plane. Image information is acquired by modulating an incident light field using a waveplate having a pattern that modifies a phase or amplitude of the incident light field, wherein the waveplate is positioned substantially in a pupil plane of an optical system; optically computing a transform between the modulated incident light field at a plane of the waveplate and an image plane; and collecting image data at the image plane. The transform can be, for example, a Fourier transform or a fractional Fourier transform