发明授权
- 专利标题: High K dielectric film
- 专利标题(中): 高K电介质膜
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申请号: US09811656申请日: 2001-03-20
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公开(公告)号: US06541280B2公开(公告)日: 2003-04-01
- 发明人: Vidya S. Kaushik , Bich-yen Nguyen , Srinivas V. Pietambaram , James Kenyon Schaeffer, III
- 申请人: Vidya S. Kaushik , Bich-yen Nguyen , Srinivas V. Pietambaram , James Kenyon Schaeffer, III
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A dielectric layer comprises lanthanum, aluminum and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with respect to the lanthanum or aluminum. In another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer. The dielectric layer can be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.
公开/授权文献
- US20020137317A1 High K dielectric film and method for making 公开/授权日:2002-09-26
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