发明授权
US06541343B1 Methods of making field effect transistor structure with partially isolated source/drain junctions
失效
具有部分隔离的源极/漏极结的场效应晶体管结构的方法
- 专利标题： Methods of making field effect transistor structure with partially isolated source/drain junctions
- 专利标题（中）： 具有部分隔离的源极/漏极结的场效应晶体管结构的方法
-
申请号： US09474836申请日： 1999-12-30
-
公开(公告)号： US06541343B1公开(公告)日： 2003-04-01
- 发明人: Anand S. Murthy , Robert S. Chau , Patrick Morrow , Robert S. McFadden
- 申请人： Anand S. Murthy , Robert S. Chau , Patrick Morrow , Robert S. McFadden
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A microelectronic structure includes at least one source/drain terminal of a first conductivity type that is partially isolated from a region of semiconductor material of a second conductivity type. In a further aspect of the invention, a process for forming a microelectronic structure, such as a MOSFET, having at least one source/drain terminal of a first conductivity type that is partially isolated from a region of semiconductor material of a second conductivity type includes forming a recess having a surface, forming a dielectric material over a portion of the surface of the recess, and back-filling the recess to form a source/drain terminal.
信息查询
