Invention Grant
- Patent Title: Micro-Raman spectroscopy system for identifying foreign material on a semiconductor wafer
- Patent Title (中): 用于识别半导体晶片上的异物的微拉曼光谱系统
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Application No.: US09723318Application Date: 2000-11-27
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Publication No.: US06545755B1Publication Date: 2003-04-08
- Inventor: Masaru Ishihama , Hiroyuki Hattori , Shuichi Muraishi , Katsuhide Ueda
- Applicant: Masaru Ishihama , Hiroyuki Hattori , Shuichi Muraishi , Katsuhide Ueda
- Priority: JP11-336335 19991126; JP2000-326572 20001026
- Main IPC: G01J344
- IPC: G01J344

Abstract:
A micro-Raman spectroscopy system capable of making effective use of the unique analyzing capabilities of Raman spectroscopy and still capable of employing information about foreign materials obtained by a separate foreign material inspection system. The micro-Raman spectroscopy system uses a sample stage having a function of reproducing an image of a foreign material on a wafer under an optical microscope, based on positional information previously obtained from foreign materials by the separate foreign material inspection system. Furthermore, the micro-Raman spectroscopy system has a function of searching a built-in database for the substance of the foreign material on the wafer, using a Raman spectrum presently obtained from the foreign material. The system includes a Raman analysis optical system and a Raman spectrometer that are connected by optical fiber.
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