公开(公告)号：US06545755B1

公开(公告)日：2003-04-08

申请号：US09723318

申请日：2000-11-27

申请人： Masaru Ishihama ,  Hiroyuki Hattori ,  Shuichi Muraishi ,  Katsuhide Ueda

发明人： Masaru Ishihama ,  Hiroyuki Hattori ,  Shuichi Muraishi ,  Katsuhide Ueda

IPC分类号： G01J344

CPC分类号： G01N21/65 ,  G01J3/44 ,  G01N21/94 ,  G01N21/9501 ,  G01N2021/656

摘要： A micro-Raman spectroscopy system capable of making effective use of the unique analyzing capabilities of Raman spectroscopy and still capable of employing information about foreign materials obtained by a separate foreign material inspection system. The micro-Raman spectroscopy system uses a sample stage having a function of reproducing an image of a foreign material on a wafer under an optical microscope, based on positional information previously obtained from foreign materials by the separate foreign material inspection system. Furthermore, the micro-Raman spectroscopy system has a function of searching a built-in database for the substance of the foreign material on the wafer, using a Raman spectrum presently obtained from the foreign material. The system includes a Raman analysis optical system and a Raman spectrometer that are connected by optical fiber.

摘要翻译： 一种能够有效利用拉曼光谱的独特分析能力的微拉曼光谱系统，并且仍然能够采用通过单独的异物检测系统获得的关于异物的信息。 微拉曼光谱系统基于通过分离的异物检查系统先前从异物获得的位置信息，使用具有在光学显微镜下在晶片上再现异物的图像的功能的样品台。 此外，微拉曼光谱系统具有使用目前从异物获得的拉曼光谱，在晶片上搜索内部数据库中的异物的物质的功能。 该系统包括通过光纤连接的拉曼分析光学系统和拉曼光谱仪。

公开(公告)号：US5066599A

公开(公告)日：1991-11-19

申请号：US555702

申请日：1990-07-23

申请人： Hiroshi Kaneta ,  Shuichi Muraishi

发明人： Hiroshi Kaneta ,  Shuichi Muraishi

IPC分类号： H01L21/66 ,  G01N21/84 ,  H01L21/324

CPC分类号： G01N21/3563 ,  G01N2021/8461 ,  Y10S117/916

摘要： A silicon crystal evaluation method includes the step of measuring, at room temperature, an intensity of an oxygen impurity infrared absorption peak of each of a plurality of silicon crystals at a wavenumber of 1107.+-.3cm.sup.-1, Each of the silicon crystals contains oxygen impurities, the silicon crystals including an evaluated silicon crystal having an unknown thermal history and reference silicon crystals having respective known thermal histories. The second step is to measure, at a temperature equal to or lower than 10K, an intensity of an oxygen impurity infrared absorption peak of each of the silicon crystals at a predetermined wavenumber. A third step is to calculate a first peak intensity ratio between the intensity of the oxygen impurity infrared absorption peak of each of the silicon crystals at 1107.+-.cm.sup.-1 and the intensity of the oxygen impurity infrared absorption peak at the predetermined wavenumber. The fourth step is to calculate a first difference between the first peak intensity ratio of the evaluated silicon crystal and a corresponding, second peak intensity ratio obtained when all oxygen impurities are isolated point lattice defects. The fifth step is to calculate a second difference between the first peak intensity ratio of each of the reference silicon crystals and the second peak intensity ratio. The sixth step is to evaluate the unknown thermal history of the evaluated silicon crystal from reference data which defines a relationship between the second difference and the known thermal histories.