发明授权
- 专利标题: Spacer formation process using oxide shield
- 专利标题(中): 隔板形成工艺采用氧化物屏蔽
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申请号: US09987956申请日: 2001-11-16
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公开(公告)号: US06548344B1公开(公告)日: 2003-04-15
- 发明人: Jochen Beintner , Stephan Kudelka , Thomas Dyer
- 申请人: Jochen Beintner , Stephan Kudelka , Thomas Dyer
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
In the formation of a semiconductor structure, where spacer formation is strongly dependent on the structure (e.g. taper), the improvement of a spacer formation on a poly stud planarized to pad nitride where an oxide is formed on top of the poly prior to the pad nitride strip, so that after pad nitride removal, the poly is etched back and nitride is deposited conformal followed by anisotropic nitride RIE etch, so that the oxide protects the nitride underneath from being etched.