- 专利标题: Semiconductor device
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申请号: US09964669申请日: 2001-09-28
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公开(公告)号: US06549484B2公开(公告)日: 2003-04-15
- 发明人: Sadayuki Morita , Takeshi Sakata , Satoru Hanzawa , Takahiro Sonoda , Haruko Tadokoro , Hiroshi Ichikawa , Osamu Nagashima
- 申请人: Sadayuki Morita , Takeshi Sakata , Satoru Hanzawa , Takahiro Sonoda , Haruko Tadokoro , Hiroshi Ichikawa , Osamu Nagashima
- 优先权: JP11-245820 19990831
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
An SDRAM has its operation mode selected to be the SDR mode in response to the first state of the external terminal (OPT), thereby releasing data, which has been read out of a memory mat, in response to a clock signal produced by a clock regenerating circuit having a function of comparing the phases of the input and output of the circuit, or selected to be the DDR mode in response to the second state of the external terminal (OPT), thereby releasing data, which has been read out of the memory mat, in response to a clock signal produced by a clock signal generation circuit in synchronism with an external clock signal.
公开/授权文献
- US20020018396A1 Semiconductor device 公开/授权日:2002-02-14
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