发明授权
- 专利标题: Method and apparatus for plating substrate and plating facility
- 专利标题(中): 电镀基板和电镀设备的方法和装置
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申请号: US09612218申请日: 2000-07-07
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公开(公告)号: US06558518B1公开(公告)日: 2003-05-06
- 发明人: Satoshi Sendai , Akihisa Hongo , Kenya Tomioka , Katsumi Tsuda , Masayuki Kumekawa , Naoaki Ogure , Kenichi Sasabe
- 申请人: Satoshi Sendai , Akihisa Hongo , Kenya Tomioka , Katsumi Tsuda , Masayuki Kumekawa , Naoaki Ogure , Kenichi Sasabe
- 优先权: JP11-194919 19990708; JP11-194921 19990708; JP11-228898 19990812; JP11-238195 19990825
- 主分类号: C25B1500
- IPC分类号: C25B1500
摘要:
A substrate such as a semiconductor wafer is plated to fill a metal such as copper (Cu) or the like in interconnection grooves defined in the substrate. An apparatus for plating such a substrate has a plating chamber for holding a plating solution, the plating chamber housing an anode that is immersible in the plating solution held by the plating chamber. A plating solution ejector pipe produces an upward jet of plating solution from a plating solution supplied to the plating chamber from an external source, and a substrate holder removably holds a substrate and positions the substrate such that a surface to be plated of the substrate is held in contact with the jet of plating solution. The plating chamber has a plating solution outlet defined in a bottom thereof for discharging a portion of the supplied plating solution via through-holes defined in the anode and/or around the anode out of the plating chamber.
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