Within a dual damascene method for forming a dual damascene aperture within a microelectronic fabrication there is employed a first etch stop layer formed of a first material and a second etch stop layer formed of a second material. One of the first material and the second material is a non-nitrogenated silicon carbide material and the other of the first material and the second material is a nitrogenated silicon carbide material. By employing the first material and the second material, there may be etched completely through the first etch stop layer to reach a contact region formed there beneath while not etching completely through the second etch stop layer to reach a first dielectric layer formed there beneath.