发明授权
- 专利标题： Method of manufacturing semiconductor device and gyro
- 专利标题（中）： 制造半导体器件和陀螺仪的方法
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申请号： US09551353申请日： 2000-04-18
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公开(公告)号： US06566155B1公开(公告)日： 2003-05-20
- 发明人: Takahiro Numai
- 申请人： Takahiro Numai
- 优先权： JP11-111022 19990419; JP11-217411 19990730; JP2000-109712 20000411
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method of manufacturing a semiconductor device comprising the steps of preparing a member having at least one semiconductor layer on a substrate, forming an electrode layer on the semiconductor layer, forming an etching mask on the electrode layer, and forming a mesa profile by etching the electrode layer and the semiconductor layer.