A method of preparing a semiconductor using ion implantation comprises: (a) providing a first material comprising (i) a first Si wafer, (ii) at least one indigenous SiC layer, (iii) at least one non-indigenous SiC layer applied to the indigenous SiC layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in the non-indigenous SiC layer, thereby establishing an implant region which defines first and second portions of the non-indigenous SiC layer; (c) providing another material comprising (i) a second Si wafer, and (ii) an oxide layer applied to a face of the second wafer; (d) providing an assembly by bonding the oxide layers of the first material and the other material; and (e) separating the first and second portions of the non-indigenous SiC layer at the implant region.