• 专利标题: Method of manufacturing tandem thin-film solar cell
  • 申请号: US09970332
    申请日: 2001-10-02
  • 公开(公告)号: US06566159B2
    公开(公告)日: 2003-05-20
  • 发明人: Toru SawadaMasashi Yoshimi
  • 申请人: Toru SawadaMasashi Yoshimi
  • 优先权: JP2000-304417 20001004; JP2001-032428 20010208; JP2001-032429 20010208
  • 主分类号: H01L2100
  • IPC分类号: H01L2100
Method of manufacturing tandem thin-film solar cell
摘要:
A method of manufacturing a tandem thin-film solar cell is provided, the solar cell including a plurality of photoelectric conversion units stacked on a substrate, the photoelectric conversion units each having a p-type layer, an i-type photoelectric conversion layer and an n-type layer deposited in this order from a light-incident side of the solar cell, and at least a rear unit among the photoelectric conversion units that is furthest from the light-incident side being a crystalline unit including a crystalline i-type photoelectric conversion layer. The manufacturing method includes the steps of forming at least one of the units on the substrate by plasma CVD and immediately thereafter forming an i-type boundary layer to a thickness of at most 5 nm by plasma CVD, and thereafter removing the substrate into the atmosphere to expose a surface of the i-type boundary layer to the atmosphere and then forming a crystalline unit on the i-type boundary layer by plasma CVD.
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