Invention Grant
- Patent Title: Method of forming a color filter
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Application No.: US09885044Application Date: 2001-06-21
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Publication No.: US06566160B2Publication Date: 2003-05-20
- Inventor: Cheng-Pang Yeh , Ching-Chung Chen
- Applicant: Cheng-Pang Yeh , Ching-Chung Chen
- Main IPC: H01L2100
- IPC: H01L2100

Abstract:
The present invention provides a method for increasing adhesion of color filters and preventing cross talk effects on a semiconductor wafer. The method first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor formed on the surface of the semiconductor wafer. Then, a plurality of metal layers are formed on the dielectric layer, each two metal layers positioned approximately above two ends of one MOS transistor sensor. Next, a passivation layer is formed, followed by the formation of a first color filter on the passivation layer. The two ends of the first color filter are aligned approximately above the two metal layers. Thereafter, a second color filter and a third color filter are sequentially formed on the passivation layer, and portions of both the second color filter and the third color filter cover one end of the first color filter. The portions of each color filter covering one other are used to enhance adhesion of the color filters, and simultaneously to function as barriers to prevent cross talk effects.
Public/Granted literature
- US20020197763A1 Method of forming a color filter Public/Granted day:2002-12-26
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