- 专利标题: Semiconductor storage device having memory chips in a stacked structure
-
申请号: US09666063申请日: 2000-09-19
-
公开(公告)号: US06566760B1公开(公告)日: 2003-05-20
- 发明人: Masayasu Kawamura , Atsushi Nakamura , Yoshihiro Sakaguchi , Yoshitaka Kinoshita , Yasushi Takahashi , Yoshihiko Inoue
- 申请人: Masayasu Kawamura , Atsushi Nakamura , Yoshihiro Sakaguchi , Yoshitaka Kinoshita , Yasushi Takahashi , Yoshihiko Inoue
- 优先权: JP11-224122 19990806
- 主分类号: H01L2302
- IPC分类号: H01L2302
摘要:
Two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units. A memory module is so constructed that a plurality of such semiconductor storage devices, in each of which two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units, are mounted on a mounting circuit board which is square and which is formed with electrodes along one latus thereof.
信息查询