Invention Grant
US06570256B2 Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
有权
碳分级层,用于改善低k电介质与硅衬底的粘附性
- Patent Title: Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
- Patent Title (中): 碳分级层,用于改善低k电介质与硅衬底的粘附性
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Application No.: US09910380Application Date: 2001-07-20
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Publication No.: US06570256B2Publication Date: 2003-05-27
- Inventor: Richard A. Conti , Prakash Chimanlal Dev , David M. Dobuzinsky , Daniel C. Edelstein , Gill Y. Lee , Kia-Seng Low , Padraic C. Shafer , Alexander Simpson , Peter Wrschka
- Applicant: Richard A. Conti , Prakash Chimanlal Dev , David M. Dobuzinsky , Daniel C. Edelstein , Gill Y. Lee , Kia-Seng Low , Padraic C. Shafer , Alexander Simpson , Peter Wrschka
- Main IPC: H01L2348
- IPC: H01L2348

Abstract:
A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.
Public/Granted literature
- US20030017642A1 Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates Public/Granted day:2003-01-23
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