Method of polishing a tungsten-containing substrate
    3.
    发明授权
    Method of polishing a tungsten-containing substrate 有权
    抛光含钨基材的方法

    公开(公告)号:US07247567B2

    公开(公告)日:2007-07-24

    申请号:US10869397

    申请日:2004-06-16

    CPC classification number: C09G1/02 C09K3/1463 C23F3/06 H01L21/3212

    Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

    Abstract translation: 本发明提供了通过使用包含钨蚀刻剂,钨蚀刻抑制剂和水的组合物对包含钨的基材进行化学机械抛光的方法,其中所述钨抛光抑制剂是聚合物,共聚物或聚合物共混物,其包含在 至少一个包含至少一个含氮杂环或叔或季氮原子的重复基团。 本发明还提供了一种特别适用于抛光含钨衬底的化学机械抛光组合物。

    Method to increase removal rate of oxide using fixed-abrasive
    6.
    发明授权
    Method to increase removal rate of oxide using fixed-abrasive 失效
    使用固定研磨剂提高氧化物去除率的方法

    公开(公告)号:US06485355B1

    公开(公告)日:2002-11-26

    申请号:US09887790

    申请日:2001-06-22

    CPC classification number: H01L21/31053 B24B37/042

    Abstract: The invention provides fixed-abrasive chemical-mechanical polishing processes which are effective in rapidly reducing thickness of oxide layers, especially siliceous oxides. The processes of the invention are preferably characterized by at least one step involving simultaneous use of a fixed-abrasive polishing element and an aqueous liquid medium containing an abrasive. Where the original oxide layer has topographic variation, the thickness reduction technique of the invention may be preceeded by topography reduction step using a fixed-abrasive and an aqueous medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide layer on the substrate.

    Abstract translation: 本发明提供固定研磨化学机械抛光方法,其有效地快速减少氧化物层的厚度,特别是二氧化硅。 本发明的方法优选的特征在于包括同时使用固定研磨抛光元件和含有磨料的含水液体介质的至少一个步骤。 在原始氧化物层具有地形变化的情况下,本发明的厚度减小技术可以在使用固定研磨剂和含有聚电解质的含水介质的地面还原步骤之前进行至少一部分抛光过程,所述抛光过程涉及减少 跨衬底上的氧化物层的地形变化(高差)。

    EMISSION SYSTEM, APPARATUS, AND METHOD
    7.
    发明申请
    EMISSION SYSTEM, APPARATUS, AND METHOD 审中-公开
    排放系统,装置和方法

    公开(公告)号:US20100146967A1

    公开(公告)日:2010-06-17

    申请号:US12333841

    申请日:2008-12-12

    CPC classification number: F02B37/00 F02B37/001 F02M26/05 F02M26/23 Y02T10/144

    Abstract: A system, apparatus, and method for exhaust gas recirculation (EGR) is disclosed. The EGR apparatus includes an EGR circuit having an input configured to receive an exhaust gas from an engine exhaust port, an output configured to return the exhaust gas to an intake port of the engine, and an EGR path configured to circulate the exhaust gas between the input and the output. The EGR apparatus also includes an expansion turbine connected to the EGR circuit in the EGR path downstream of the input to receive the exhaust gas, the expansion turbine configured to expand the exhaust gas and reduce a pressure thereof. The EGR apparatus further includes an EGR compressor connected to the EGR path downstream of the expansion turbine and decoupled from the expansion turbine, the EGR compressor configured to compress the exhaust gas for circulation to the output.

    Abstract translation: 公开了一种用于废气再循环(EGR)的系统,装置和方法。 EGR装置包括:EGR回路,其具有被配置为接收来自发动机排气口的废气的输入,被配置为将排气返回到发动机的进气口的输出;以及EGR路径,其被配置为使废气在 输入和输出。 EGR装置还包括在输入端下游的EGR路径中连接到EGR回路以接收废气的膨胀涡轮机,该膨胀涡轮机构造成膨胀排气并降低其压力。 EGR装置还包括连接到膨胀涡轮机下游的EGR路径并与膨胀涡轮分离的EGR压缩机,EGR压缩机构造成压缩排气以循环到输出端。

    METHOD OF POLISHING A TUNGSTEN-CONTAINING SUBSTRATE
    8.
    发明申请
    METHOD OF POLISHING A TUNGSTEN-CONTAINING SUBSTRATE 有权
    抛光含钨基材的方法

    公开(公告)号:US20070214728A1

    公开(公告)日:2007-09-20

    申请号:US11670137

    申请日:2007-02-01

    CPC classification number: C09G1/02 C09K3/1463 C23F3/06 H01L21/3212

    Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

    Abstract translation: 本发明提供了通过使用包含钨蚀刻剂,钨蚀刻抑制剂和水的组合物对包含钨的基材进行化学机械抛光的方法,其中所述钨抛光抑制剂是聚合物,共聚物或聚合物共混物,其包含在 至少一个包含至少一个含氮杂环或叔或季氮原子的重复基团。 本发明还提供了一种特别适用于抛光含钨衬底的化学机械抛光组合物。

    Slurry-less chemical-mechanical polishing
    9.
    发明授权
    Slurry-less chemical-mechanical polishing 有权
    无浆化学机械抛光

    公开(公告)号:US06294470B1

    公开(公告)日:2001-09-25

    申请号:US09469922

    申请日:1999-12-22

    CPC classification number: H01L21/31053

    Abstract: The invention provides slurry-less chemical-mechanical polishing processes which are effective in planarizing oxide materials, especially siliceous oxides, even where the starting oxide layer has significant topographical variation. The processes of the invention are preferably characterized by the use of a fixed abrasive polishing element and by use of an aqueous liquid medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide material on the substrate. The method reduces or eliminates the transfer of topographic variations to levels below the desired planarization level. The processes enable elimination of special endpoint detection techniques. The processes are also especially suitable for polishing interlevel dielectrics.

    Abstract translation: 本发明提供无浆化学机械抛光方法,其有效平坦化氧化物材料,特别是硅氧化物,即使起始氧化物层具有显着的形貌变化。 本发明的方法优选的特征在于使用固定的研磨抛光元件,并且通过使用含有聚电解质的含水液体介质,用于抛光过程的至少一部分,包括减少跨越的地形变化量(高差) 衬底上的氧化物材料。 该方法减少或消除了地形变化的转移到低于期望的平坦化水平的水平。 这些过程能够消除特殊的端点检测技术。 该工艺也特别适用于抛光层间电介质。

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