- 专利标题: Semiconductor memory device
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申请号: US10123167申请日: 2002-04-17
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公开(公告)号: US06577553B2公开(公告)日: 2003-06-10
- 发明人: Ryu Makabe , Masaki Tsukude , Hirotoshi Sato , Shinichi Kobayashi
- 申请人: Ryu Makabe , Masaki Tsukude , Hirotoshi Sato , Shinichi Kobayashi
- 优先权: JP2001-129945 20010426
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
Successive data read access with a final address specified is detected by a command mode detecting circuit to set a command mode entry status. In the command mode entry, a command of designating an internal state is made acceptable in accordance with a predetermined external signal. Consequently, a semiconductor memory device that enters a command mode, maintaining compatibility of pins and signal timings with a conventional static memory is provided.
公开/授权文献
- US20020159323A1 Semiconductor memory device 公开/授权日:2002-10-31
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