发明授权
- 专利标题： Semiconductor memory device having ferroelectric film and manufacturing method thereof
- 专利标题（中）： 具有铁电体膜的半导体存储器件及其制造方法
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申请号： US09850224申请日： 2001-05-08
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公开(公告)号： US06579754B2公开(公告)日： 2003-06-17
- 发明人: Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
- 申请人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
- 优先权： JP10-097117 19980409
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
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