公开(公告)号：US06995058B2

公开(公告)日：2006-02-07

申请号：US10183669

申请日：2002-06-28

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L21/8242

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

公开(公告)号：US06239457B1

公开(公告)日：2001-05-29

申请号：US09288672

申请日：1999-04-09

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L2976

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

摘要翻译： 本发明是以制造成品率高的铁电薄膜电容器作为存储电容器的高品质半导体存储器件，规定了电容器的铁电薄膜，使得晶粒尺寸的相对标准偏差为13％以下 ，从而确保高剩余极化值和小的薄膜疲劳（大的可重写数量）。

公开(公告)号：US06579754B2

公开(公告)日：2003-06-17

申请号：US09850224

申请日：2001-05-08

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

摘要翻译： 本发明是以制造成品率高的铁电薄膜电容器作为存储电容器的高质量的半导体存储器件，规定了电容器的铁电薄膜，晶体尺寸的相对标准偏差为13％， 从而确保高的剩余极化值和小的薄膜疲劳（大的可重写数量）。

公开(公告)号：US06445025B2

公开(公告)日：2002-09-03

申请号：US09848420

申请日：2001-05-04

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L2976

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

公开(公告)号：US06623986B2

公开(公告)日：2003-09-23

申请号：US09984465

申请日：2001-10-30

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： Along life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.

摘要翻译： 通过在铁氧体层7 /电极6的边界上的上保护电极和上电极8以及降解防止层上设置多个防结层，可以获得使用薄铁电体膜电容器作为记忆电容器的寿命铁电存储器件 或者提供在铁电层7 /上电极8的边界处减少改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且具有较低的铁电特性降低以达到 长寿命铁电存储器件。

公开(公告)号：US06906365B2

公开(公告)日：2005-06-14

申请号：US09984609

申请日：2001-10-30

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L21/8247 ,  H01L21/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/12 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.

摘要翻译： 通过在铁电层7 /电极的边界上的上保护电极和上电极8以及劣化防止层上设置多个防腐层，可获得使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件 或者提供在铁电层7 /上电极8的边界处减少改性层的步骤。 这提供了一种薄的铁电薄膜电容器，其经受较少的疲劳和压印，并且其铁电特性的降低较少以获得长寿命的铁电存储器件。

公开(公告)号：US06316798B1

公开(公告)日：2001-11-13

申请号：US09331670

申请日：1999-06-23

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L2976

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing one or a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7 /electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of the ferroelectric characteristic, thereby to attain a long life ferroelectric memory device.

摘要翻译： 使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件通过在铁氧体层7的边界上的上保护电极和上电极8以及劣化防止层上设置一个或多个降解防止层来获得 /电极6,8，或者提供在铁电层7 /上电极8的边界处减小改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且铁电体的劣化较少 特性，从而获得长寿命的铁电存储器件。

公开(公告)号：US06903371B2

公开(公告)日：2005-06-07

申请号：US10773950

申请日：2004-02-06

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US06657227B2

公开(公告)日：2003-12-02

申请号：US09910314

申请日：2001-07-19

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

公开(公告)号：US20050202612A1

公开(公告)日：2005-09-15

申请号：US11123496

申请日：2005-05-04

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。