A method of forming interconnects. An oxide masking layer with patterns is formed overlaying the metal layer. The patterns of the masking layer are transferred into the metal layer so as to form an opening. Then, a silicon nitride liner is conformally formed on the masking layer, the metal layer and the first insulating layer. Next, the silicon nitride liner and the masking layer are partially removed by reactive ion etching to leave a facet mask to reduce the aspect ratio of the opening followed by removal of the remaining silicon nitride liner. Then, an insulating layer is deposited to fill the opening.