发明授权
- 专利标题： Semiconductor device and a method of manufacturing thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09544997申请日： 2000-04-06
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公开(公告)号： US06586329B1公开(公告)日： 2003-07-01
- 发明人: Yoshinori Tanaka , Mitsuya Kinoshita , Shinya Watanabe , Tatsuo Kasaoka , Moriaki Akazawa , Toshiaki Ogawa
- 申请人： Yoshinori Tanaka , Mitsuya Kinoshita , Shinya Watanabe , Tatsuo Kasaoka , Moriaki Akazawa , Toshiaki Ogawa
- 优先权： JP4-318572 19921127; JP5-002692 19930111; JP5-240646 19930831
- 主分类号： H01L21311
- IPC分类号： H01L21311
摘要：
A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11.
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