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14 条记录 (耗时 0.012 秒)

    Manufacturing method of a semiconductor device with a trench capacitor
    3.
    发明授权
    Manufacturing method of a semiconductor device with a trench capacitor 失效
    具有沟槽电容器的半导体器件的制造方法

    公开(公告)号：US5302541A

    公开(公告)日：1994-04-12

    申请号：US17904

    申请日：1993-02-16

    申请人： Moriaki Akazawa

    发明人： Moriaki Akazawa

    IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L21/70

    CPC分类号： H01L27/10864 ,  H01L27/10841

    摘要： A semiconductor device includes a second insulator layer (12) a first conductor layer (13) and a second insulator layer (14) stacked in this order on a semiconductor substrate (11), and a trench (15) formed to penetrate the stacked triple layer and extend into the semiconductor substrate. A capacitor is formed at a portion of the trench located in the semiconductor substrate. A transistor is formed directly on this capacitor. The capacitor has one electrode formed of the semiconductor substrate and the other electrode formed of a second conductor layer (18) formed in the trench to open a dielectric film (17). The transistor includes a gate electrode formed of the first conductor layer and source/drain regions (20, 21) of a second conductivity type distributed in the vicinity of the first and second insulator layers in an active layer (19) filling the trench. The drain and source regions of the transistor are formed by thermally diffusing impurities included in the first and second insulator layers into the active layer. Since a region to be added only for isolation is unnecessary in this semiconductor device and a manufacture method thereof, a memory cell area can be reduced, resulting in higher integration of the device.

    摘要翻译： 半导体器件包括在半导体衬底（11）上依次堆叠的第二绝缘体层（12），第一导体层（13）和第二绝缘体层（14），以及形成为穿透叠置的三层 并延伸到半导体衬底中。 在位于半导体衬底中的沟槽的一部分处形成电容器。 晶体管直接形成在该电容器上。 电容器具有由半导体衬底形成的一个电极，而另一个电极由形成在沟槽中的第二导体层（18）形成以打开电介质膜（17）。 晶体管包括由填充沟槽的有源层（19）中分散在第一和第二绝缘体层附近的第二导电类型的源极/漏极区（20,21）形成的栅电极和源/漏区（20,21）。 晶体管的漏极和源极区域通过将包括在第一和第二绝缘体层中的杂质热扩散到有源层中而形成。 由于在该半导体器件中不需要添加用于隔离的区域及其制造方法，因此可以减小存储单元面积，导致器件的集成化。

    Vacuum-treatment apparatus
    4.
    发明授权
    Vacuum-treatment apparatus 失效
    真空处理设备

    公开(公告)号：US5203981A

    公开(公告)日：1993-04-20

    申请号：US835331

    申请日：1992-02-14

    申请人： Moriaki Akazawa

    发明人： Moriaki Akazawa

    IPC分类号： C23C16/44 ,  C23C16/458 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

    CPC分类号： H01L21/68721 ,  H01J37/32082 ,  H01J2237/022

    摘要： A vacuum-treatment apparatus employs a magnetically driven clamp which uses repulsive and attractive forces between magnets. The clamp mechanism is simplified, maintenance of the apparatus can be easily performed, and the surfaces which mechanically contact one another are decreased as much as possible so that a vacuum-treatment apparatus which generates less dust is obtained.

    摘要翻译： 真空处理装置采用磁力驱动的夹具，其在磁体之间使用排斥力和吸引力。 夹紧机构简化，可以容易地进行设备的维护，并且尽可能地减少机械接触的表面，从而获得产生较少灰尘的真空处理设备。

    Semiconductor wafer treating device utilizing a plasma
    5.
    发明授权
    Semiconductor wafer treating device utilizing a plasma 失效
    利用等离子体的半导体晶片处理装置

    公开(公告)号：US4982138A

    公开(公告)日：1991-01-01

    申请号：US277640

    申请日：1988-11-29

    申请人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

    发明人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

    CPC分类号： H01J37/32678

    摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

    摘要翻译： 利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕 该等离子体产生室在其中产生最小的B场。 通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。 因此，提高等离子体发生室中的等离子体的密度和稳定性。 等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。 最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

    Method for cleaning semiconductor devices
    6.
    发明授权
    Method for cleaning semiconductor devices 失效
    半导体器件清洗方法

    公开(公告)号：US5474615A

    公开(公告)日：1995-12-12

    申请号：US993514

    申请日：1992-12-17

    申请人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

    发明人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

    IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  C03C15/00

    CPC分类号： H01L21/02046 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/67028 ,  Y10S438/963

    摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.

    摘要翻译： 公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。 在其上形成图案或沟槽的被处理基板位于处理容器中。 与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。 反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。 根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。 因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

    Semiconductor device and manufacturing method thereof
    8.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US5218218A

    公开(公告)日：1993-06-08

    申请号：US895158

    申请日：1992-06-05

    申请人： Moriaki Akazawa

    发明人： Moriaki Akazawa

    IPC分类号： H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10864 ,  H01L27/10841

    摘要： A semiconductor device includes a second insulator layer (12), a first conductor layer (13) and a second insulator layer (14) stacked in this order on a semiconductor substrate (11), and a trench (15) formed to penetrate the stacked triple layer and extend into the semiconductor substrate. A capacitor is formed at a portion of the trench located in the semiconductor substrate. A transistor is formed directly on this capacitor. The capacitor has one electrode formed of the semiconductor substrate and the other electrode formed of a second conductor layer (18) formed in the trench to open a dielectric film (17). The transistor includes a gate electrode formed of the first conductor layer and source/drain regions (20, 21) of a second conductivity type distributed in the vicinity of the first and second insulator layers in an active layer (19) filling the trench. The drain and source regions of the transistor are formed by thermally diffusing impurities included in the first and second insulator layers into the active layer. Since a region to be added only for isolation is unnecessary in this semiconductor device and a manufacture method thereof, a memory cell area can be reduced, resulting in higher integration of the device.

    摘要翻译： 半导体器件包括在半导体衬底（11）上依次堆叠的第二绝缘体层（12），第一导体层（13）和第二绝缘体层（14），以及形成为穿透层叠的沟槽 三层并延伸到半导体衬底中。 在位于半导体衬底中的沟槽的一部分处形成电容器。 晶体管直接形成在该电容器上。 电容器具有由半导体衬底形成的一个电极，而另一个电极由形成在沟槽中的第二导体层（18）形成以打开电介质膜（17）。 晶体管包括由填充沟槽的有源层（19）中分散在第一和第二绝缘体层附近的第二导电类型的源极/漏极区（20,21）形成的栅电极和源/漏区（20,21）。 晶体管的漏极和源极区域通过将包括在第一和第二绝缘体层中的杂质热扩散到有源层中而形成。 由于在该半导体器件中不需要添加用于隔离的区域及其制造方法，因此可以减小存储单元面积，导致器件的集成化。