发明授权
- 专利标题： Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fabricating it
- 专利标题（中）： 具有半导体单元的半导体电路的半导体装置及其制造方法
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申请号： US10124373申请日： 2002-04-18
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公开(公告)号： US06586766B2公开(公告)日： 2003-07-01
- 发明人: Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
- 申请人： Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
- 优先权： JP10-202376 19980716
- 主分类号： H01L2904
- IPC分类号： H01L2904
摘要：
The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.