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1.发明申请Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and processes for production thereof 失效配备有由半导体元件构成的半导体电路的半导体装置及其制造方法公开(公告)号：US20060278878A1
公开(公告)日：2006-12-14
申请号：US11480429
申请日：2006-07-05
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/42384
摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
摘要翻译： 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，其具有低电阻率并且在400℃及以上的温度下经受热处理。 由于布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（宽度为0.1-5μm）耐受并且栅极布线被保护膜保护的温度，所以栅极布线保持其低电阻。
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2.发明授权Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fabricating it 有权具有半导体单元的半导体电路的半导体装置及其制造方法公开(公告)号：US06586766B2
公开(公告)日：2003-07-01
申请号：US10124373
申请日：2002-04-18
IPC分类号： H01L2904
CPC分类号： H01L27/1237 , G02F1/13454 , H01L27/1248 , H01L29/458 , H01L29/4908 , H01L29/78645
摘要： The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.
摘要翻译： 本发明提供一种用于制造在同一基板上具有不同LDD结构的TFT器件和TFT器件的高生产率方法。 具体地说，本发明提供了一种新颖的TFT结构，以及高生产率的制造方法。 使用具有良好耐热性的Ta膜或Ta基膜形成互连，并且互连用保护膜覆盖。 互连可以在高温（400〜700℃）下进行热处理，另外，保护膜用作蚀刻停止体。 在器件的外围驱动电路部分中，具有LDD结构的TFT以自对准工艺设置，其中使用侧壁126和127; 而在其中的像素矩阵部分中，具有LDD结构的TFT被设置在非自对准工艺中，其中使用绝缘体125。
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公开(公告)号：US07078768B2
公开(公告)日：2006-07-18
申请号：US10815701
申请日：2004-04-02
IPC分类号： H01L27/12
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/42384
摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400–700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1–5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
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4.发明授权Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it 有权具有半导体单元的半导体电路的半导体装置及其制造方法公开(公告)号：US06399960B1
公开(公告)日：2002-06-04
申请号：US09353370
申请日：1999-07-14
IPC分类号： H01L3300
CPC分类号： H01L27/1237 , G02F1/13454 , H01L27/1248 , H01L29/458 , H01L29/4908 , H01L29/78645
摘要： The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.
摘要翻译： 本发明提供一种用于制造在同一基板上具有不同LDD结构的TFT器件和TFT器件的高生产率方法。 具体地说，本发明提供了一种新颖的TFT结构，以及高生产率的制造方法。 使用具有良好耐热性的Ta膜或Ta基膜形成互连，并且互连用保护膜覆盖。 互连可以在高温（400〜700℃）下进行热处理，另外，保护膜用作蚀刻停止体。 在器件的外围驱动电路部分中，具有LDD结构的TFT以自对准工艺设置，其中使用侧壁126和127; 而在其中的像素矩阵部分中，具有LDD结构的TFT被设置在非自对准工艺中，其中使用绝缘体125。
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5.发明授权Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it 有权具有半导体单元的半导体电路的半导体装置及其制造方法公开(公告)号：US07371623B2
公开(公告)日：2008-05-13
申请号：US10438818
申请日：2003-05-16
IPC分类号： H01L21/84
CPC分类号： H01L27/1237 , G02F1/13454 , H01L27/1248 , H01L29/458 , H01L29/4908 , H01L29/78645
摘要： The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.
摘要翻译： 本发明提供一种用于制造在同一基板上具有不同LDD结构的TFT器件和TFT器件的高生产率方法。 具体地说，本发明提供了一种新颖的TFT结构，以及高生产率的制造方法。 使用具有良好耐热性的Ta膜或Ta基膜形成互连，并且互连用保护膜覆盖。 互连可以在高温（400〜700℃）下进行热处理，另外，保护膜用作蚀刻停止体。 在器件的外围驱动电路部分中，具有LDD结构的TFT以自对准工艺设置，其中使用侧壁126和127; 而在其中的像素矩阵部分中，具有LDD结构的TFT被设置在非自对准工艺中，其中使用绝缘体125。
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6.发明授权Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof 有权配备有由半导体元件构成的半导体电路的半导体装置及其制造方法公开(公告)号：US06822293B2
公开(公告)日：2004-11-23
申请号：US10338025
申请日：2003-01-08
IPC分类号： H01L2976
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/42384
摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 &mgr;m wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
摘要翻译： 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，其具有低电阻率并且在400℃及以上的温度下经受热处理。 由于布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（宽度为0.1-5μm）耐受并且栅极布线被保护膜保护的温度，所以栅极布线保持其低电阻。
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7.发明授权Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof 有权配备有由半导体元件构成的半导体电路的半导体装置及其制造方法公开(公告)号：US06608357B1
公开(公告)日：2003-08-19
申请号：US09641768
申请日：2000-08-21
IPC分类号： H01L2976
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/42384
摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 &mgr;m wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
摘要翻译： 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，其具有低电阻率并且在400℃及以上的温度下经受热处理。 由于布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（宽度为0.1-5μm）耐受并且栅极布线被保护膜保护的温度，所以栅极布线保持其低电阻。
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8.发明授权Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof 有权配备有由半导体元件构成的半导体电路的半导体装置及其制造方法
公开(公告)号：US6144082A
公开(公告)日：2000-11-07
申请号：US353282
申请日：1999-07-14
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/76
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/42384
摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400.degree. C. and above. Heat treatment at a high temperature (400-700.degree. C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 .mu.m wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
摘要翻译： 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，该电极结构具有低电阻率并且可在400℃以上进行热处理。 因为布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（0.1-5μm宽）耐受并且栅极布线被保护膜保护的温度，所以栅极布线保持其低电阻。
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9.发明授权Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and processes for production thereof 失效配备有由半导体元件构成的半导体电路的半导体装置及其制造方法公开(公告)号：US07709844B2
公开(公告)日：2010-05-04
申请号：US11480429
申请日：2006-07-05
IPC分类号： H01L27/14
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1277 , H01L29/42384
摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.
摘要翻译： 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，其具有低电阻率并且在400℃及以上的温度下经受热处理。 由于布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（0.1-5μm宽）承受的温度，栅极布线被保护膜保护，所以栅极布线保持其低电阻。
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10.发明授权公开(公告)号：US07977680B2
公开(公告)日：2011-07-12
申请号：US12170588
申请日：2008-07-10
申请人： Tatsuya Arao , Atsuo Isobe , Toru Takayama
发明人： Tatsuya Arao , Atsuo Isobe , Toru Takayama
IPC分类号： H01L29/04 , H01L31/036 , H01L35/24
CPC分类号： G02F1/133305 , G02F1/1362 , G02F1/136213 , G02F1/136227 , G02F2001/136295 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/66742 , H01L29/78603
摘要： In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.
摘要翻译： 在具有金属表面的基板的半导体器件中，形成在具有金属表面的基板上的绝缘膜和形成在绝缘膜上的像素单元; 像素单元包括TFT和与TFT连接的布线，并且存储电容器由具有金属表面的基板（11），绝缘膜（12）和布线（21）构成。 由于绝缘膜更薄，并且随着绝缘膜和布线接触的区域的面积较大，所以存储电容器具有较大的容量。
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