- 专利标题: Electrostatic discharge protection device having a graded junction and method for forming the same
-
申请号: US09927275申请日: 2001-08-09
-
公开(公告)号: US06593218B2公开(公告)日: 2003-07-15
- 发明人: Stephen R. Porter , Manny K. Ma , Stephen Casper , Kevin Duesman
- 申请人: Stephen R. Porter , Manny K. Ma , Stephen Casper , Kevin Duesman
- 主分类号: H01L21425
- IPC分类号: H01L21425
摘要:
An electrostatic discharge protection device is formed in a substrate and contains a drain area of a first dopant concentration abutting an extended drain area having a dopant concentration lower than the first dopant concentration. Similarly, a highly doped source area abuts a lower doped source extension area. The source and drain are laterally bounded by oxide regions and covered by an insulation layer. The areas of lower doping prevent charge crowding during an electrostatic discharge event by resistively forcing current though the nearly planer bottom surface of the drain, rather than the curved drain extension. In addition, a highly doped buried layer can abut an area of a graded doping level. By adjusting the doping levels of the graded areas and the buried layers, the substrate breakdown voltage is pre-selected.
公开/授权文献
信息查询