发明授权
US06596547B2 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
有权
通过金属有机化学气相沉积或其他处理防止PZT形成期间IrOx的还原的方法
- 专利标题： Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
- 专利标题（中）： 通过金属有机化学气相沉积或其他处理防止PZT形成期间IrOx的还原的方法
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申请号： US10036805申请日： 2001-12-21
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公开(公告)号： US06596547B2公开(公告)日： 2003-07-22
- 发明人: Sanjeev Aggarwal , Stephen R. Gilbert , Scott R. Summerfelt
- 申请人： Sanjeev Aggarwal , Stephen R. Gilbert , Scott R. Summerfelt
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method of fabricating a ferroelectric capacitor is disclosed. The method comprises decreasing a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. The method comprises forming an oxygen doped iridium layer and forming a ferroelectric dielectric layer thereover. During the formation of the ferroelectric, the oxygen doped iridium layer converts to an iridium oxide layer.