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公开(公告)号：US06528386B1
公开(公告)日：2003-03-04
申请号：US10097919
申请日：2002-03-13
申请人： Scott R. Summerfelt , Luigi Colombo , Stephen R. Gilbert , Theodore S. Moise, IV , Sanjeev Aggarwal
发明人： Scott R. Summerfelt , Luigi Colombo , Stephen R. Gilbert , Theodore S. Moise, IV , Sanjeev Aggarwal
IPC分类号： H01L2176
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the patterning of a top electrode layer and a dielectric layer to form a capacitor stack structure having sidewalls associated therewith. Prior to patterning the bottom electrode layer, a protective film is formed on the sidewalls of the capacitor stack structure in order to protect the dielectric material from conductive contaminants associated with a subsequent patterning of the bottom electrode layer.
摘要翻译： 公开了一种制造铁电电容器的方法。 该方法包括图案化顶部电极层和电介质层以形成具有与其相关联的侧壁的电容器堆叠结构。 在图形化底部电极层之前，在电容器堆叠结构的侧壁上形成保护膜，以保护电介质材料免受与随后的底部电极层的图案化有关的导电污染物的影响。
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2.发明授权Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing 有权通过金属有机化学气相沉积或其他处理防止PZT形成期间IrOx的还原的方法公开(公告)号：US06596547B2
公开(公告)日：2003-07-22
申请号：US10036805
申请日：2001-12-21
IPC分类号： H01L2100
CPC分类号： H01L28/75 , C23C14/0084 , C23C14/08 , H01L28/55
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises decreasing a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. The method comprises forming an oxygen doped iridium layer and forming a ferroelectric dielectric layer thereover. During the formation of the ferroelectric, the oxygen doped iridium layer converts to an iridium oxide layer.
摘要翻译： 公开了一种制造铁电电容器的方法。 该方法包括在形成电容器的铁电介质部分期间降低底部电极材料的减少。 该方法包括形成氧掺杂铱层并在其上形成铁电介质层。 在形成铁电体期间，掺杂氧的铱层转化为氧化铱层。
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3.发明授权Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing 有权通过金属有机化学气相沉积或其他处理防止PZT形成期间IrOx的还原的方法公开(公告)号：US06686236B2
公开(公告)日：2004-02-03
申请号：US10036827
申请日：2001-12-21
IPC分类号： H01L218242
CPC分类号： H01L21/02197 , C23C14/08 , H01L21/02271 , H01L21/31691 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resistance of the ferroelectric capacitor is increased substantially.
摘要翻译： 公开了一种制造铁电电容器的方法。 该方法包括在形成电容器的铁电介质部分期间降低底部电极材料的减少。 以上述方式，铁电电容器的耐疲劳性大幅度提高。
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公开(公告)号：US06635497B2
公开(公告)日：2003-10-21
申请号：US10036714
申请日：2001-12-21
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/31691 , H01L27/10811 , H01L28/55 , H01L28/75
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resistance of the ferroelectric capacitor is increased substantially.
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5.发明授权Methods of preventing reduction of irox during PZT formation by metalorganic chemical vapor deposition or other processing 有权通过金属有机化学气相沉积或其他处理防止PZT形成期间irox的还原的方法公开(公告)号：US06528328B1
公开(公告)日：2003-03-04
申请号：US10036903
申请日：2001-12-21
IPC分类号： H01L2100
CPC分类号： H01L28/75 , H01L27/115 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resistance of the ferroelectric capacitor is increased substantially.
摘要翻译： 公开了一种制造铁电电容器的方法。 该方法包括在形成电容器的铁电介质部分期间降低底部电极材料的减少。 以上述方式，铁电电容器的耐疲劳性大幅度提高。
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6.发明授权Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing 有权通过金属有机化学气相沉积或其他处理防止PZT形成期间IrOx的还原的方法公开(公告)号：US06500678B1
公开(公告)日：2002-12-31
申请号：US10036771
申请日：2001-12-21
IPC分类号： H01G706
CPC分类号： H01L28/55 , C23C14/08 , C23C16/0281 , C23C16/409 , H01L27/11502 , H01L27/11507 , H01L28/60
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resistance of the ferroelectric capacitor is increased substantially.
摘要翻译： 公开了一种制造铁电电容器的方法。 该方法包括在形成电容器的铁电介质部分期间降低底部电极材料的减少。 以上述方式，铁电电容器的耐疲劳性大幅度提高。
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公开(公告)号：US06872669B1
公开(公告)日：2005-03-29
申请号：US10742190
申请日：2003-12-19
IPC分类号： H01L21/02 , H01L21/302 , H01L21/314 , H01L21/316 , H01L21/321 , H01L21/3213
CPC分类号： H01L28/55 , H01L21/3145 , H01L21/31691 , H01L21/3212 , H01L21/32131 , H01L28/65 , H01L28/75
摘要： The present invention is directed to a method of forming a ferroelectric capacitor having a (111) PZT texture. The method includes forming a smooth bottom electrode diffusion barrier layer that facilitates a preferential (111) texture in the subsequently formed bottom electrode layer. The (111) bottom electrode layer texture than facilitates a high quality (111) texture in the overlying PZT layer, thereby improving bit-to-bit polarization charge uniformity for various capacitors as the ferroelectric capacitor sizes continue to shrink.
摘要翻译： 本发明涉及形成具有（111）PZT纹理的铁电电容器的方法。 该方法包括形成平滑的底部电极扩散阻挡层，其有利于随后形成的底部电极层中的优先（111）纹理。 （111）底电极层结构有利于上覆PZT层中的高质量（111）纹理，从而提高了随着铁电电容器尺寸的不断缩小，各种电容器的位对齐极化电荷均匀性。
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8.发明授权Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch 有权在底部电极蚀刻期间用侧壁构图FeRAM电容器的方法公开(公告)号：US06635498B2
公开(公告)日：2003-10-21
申请号：US10222718
申请日：2002-08-16
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/31122 , H01L21/32136 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the patterning of a top electrode layer and a dielectric layer to form a capacitor stack structure having sidewalls associated therewith. Prior to patterning the bottom electrode layer, a protective film is formed on the sidewalls of the capacitor stack structure in order to protect the dielectric material from conductive contaminants associated with a subsequent patterning of the bottom electrode layer.
摘要翻译： 公开了一种制造铁电电容器的方法。 该方法包括图案化顶部电极层和电介质层以形成具有与其相关联的侧壁的电容器堆叠结构。 在图形化底部电极层之前，在电容器堆叠结构的侧壁上形成保护膜，以保护电介质材料免受与随后的底部电极层的图案化有关的导电污染物的影响。
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9.发明授权Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same 有权用于保护半导体器件中的铁电电容器的氢屏障及其制造方法公开(公告)号：US06984857B2
公开(公告)日：2006-01-10
申请号：US10620516
申请日：2003-07-16
申请人： K. R. Udayakumar , Martin G. Albrecht , Theodore S. Moise, IV , Scott R. Summerfelt , Sanjeev Aggarwal , Jeff L. Large
发明人： K. R. Udayakumar , Martin G. Albrecht , Theodore S. Moise, IV , Scott R. Summerfelt , Sanjeev Aggarwal , Jeff L. Large
IPC分类号： H01L29/76
CPC分类号： H01L28/57 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during back-end manufacturing processes employing hydrogen. The hydrogen barrier comprises silicon rich silicon oxide or amorphous silicon, which can be used in combination with an aluminum oxide layer to inhibit diffusion of process-related hydrogen into the ferroelectric capacitor layer.
摘要翻译： 提出了半导体器件和制造方法，其中在铁电电容器上方设置氢气阻挡层，以防止在使用氢的后端制造工艺期间铁电材料的劣化。 氢势垒包括富硅氧化物或非晶硅，其可以与氧化铝层组合使用以抑制工艺相关氢扩散到铁电电容器层中。
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10.发明授权Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier 有权在电容器侧壁上使用无定形氧化铝作为氢气屏障公开(公告)号：US06876021B2
公开(公告)日：2005-04-05
申请号：US10303560
申请日：2002-11-25
申请人： J. Scott Martin , Scott R. Summerfelt , Theodore S. Moise , Kelly J. Taylor , Luigi Colombo , Sanjeev Aggarwal , Sirisha Kuchimanchi , K. R. Udayakumar , Lindsey Hall
发明人： J. Scott Martin , Scott R. Summerfelt , Theodore S. Moise , Kelly J. Taylor , Luigi Colombo , Sanjeev Aggarwal , Sirisha Kuchimanchi , K. R. Udayakumar , Lindsey Hall
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： The present invention forms sidewall diffusion barrier layer(s) that mitigate hydrogen contamination of ferroelectric capacitors. Sidewall diffusion barrier layer(s) of the present invention are formed via a physical vapor deposition process at a low temperature. By so doing, the sidewall diffusion barrier layer(s) are substantially amorphous and provide superior protection against hydrogen diffusion than conventional and/or crystalline sidewall diffusion barrier layers.
摘要翻译： 本发明形成减轻铁电电容器的氢污染的侧壁扩散阻挡层。 本发明的侧壁扩散阻挡层通过物理气相沉积工艺在低温下形成。 通过这样做，侧壁扩散阻挡层基本上是无定形的，并提供优于常规和/或结晶侧壁扩散阻挡层的氢气扩散保护。
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