发明授权
- 专利标题: Semiconductor raised source-drain structure
- 专利标题(中): 半导体升高源极 - 漏极结构
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申请号: US10008655申请日: 2001-11-09
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公开(公告)号: US06597045B2公开(公告)日: 2003-07-22
- 发明人: Fernando Gonzalez , Chandra Mouli
- 申请人: Fernando Gonzalez , Chandra Mouli
- 主分类号: H01L2710
- IPC分类号: H01L2710
摘要:
A semiconductor structure which includes a raised source, a raised drain, a gate located between the source and the drain, a first capping layer in communication with at least a portion of the gate and the source, a second capping layer in communication with at least a portion of the gate and the drain, a first portion of a gate oxide region in communication with at least a portion of the gate and the source, a second portion of a gate oxide region in communication with at least a portion of the gate and the drain. The source, the gate, the first capping layer, and the first portion of a gate oxide region define a first gap. The drain, the gate, the second capping layer, and the second portion of a gate oxide region define a second gap. The structure also includes a first junction area located beneath the first gap, the gate and the source and a second junction area located beneath the second gap, the gate and the drain.
公开/授权文献
- US20020053688A1 Semiconductor raised source-drain structure 公开/授权日:2002-05-09