- 专利标题： Locally increasing sidewall density by ion implantation
-
申请号： US09902024申请日： 2001-07-10
-
公开(公告)号： US06610594B2公开(公告)日： 2003-08-26
- 发明人: Eric M. Apelgren , Christian Zistl , Jeremy I. Martin , Paul R. Besser , Fred Cheung
- 申请人： Eric M. Apelgren , Christian Zistl , Jeremy I. Martin , Paul R. Besser , Fred Cheung
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A method is provided, the method comprising forming a first conductive structure, and forming a first dielectric layer above the first conductive structure. The method also comprises forming a first opening in the first dielectric layer above at least a portion of the first conductive structure, the first opening having sidewalls, and densifying the sidewalls.
公开/授权文献
- US20030013296A1 Locally increasing sidewall density by ion implantation 公开/授权日：2003-01-16
信息查询
