Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitride

发明授权

US06617217B2 Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitride 有权

标题翻译：通过将氮氧化物注入井，减少了浅沟槽隔离中的良好注入沟槽和产生的闭锁特性

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专利标题： Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitride
专利标题（中）： 通过将氮氧化物注入井，减少了浅沟槽隔离中的良好注入沟槽和产生的闭锁特性
申请号： US09967067

申请日： 2001-09-28
公开(公告)号： US06617217B2

公开(公告)日： 2003-09-09
发明人: Mahalingam Nandakumar , Dixit Kapila , Seetharaman Sridhar
申请人： Mahalingam Nandakumar , Dixit Kapila , Seetharaman Sridhar
主分类号： H01L21336
IPC分类号： H01L21336

Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitride

摘要：

Retrograde wells are formed by implanting through nitride films (40). Nitride films (40) are formed after STI (20) formation. By selectively masking a portion of the wafer with photoresist (47) after portions of a retrograde well are formed (45, 50, 55, and 60) the channeling of the subsequent zero degree implants is reduced.

摘要（中）：

通过植入氮化物膜（40）形成逆行井。在STI（20）形成之后形成氮化物膜（40）。通过在形成逆行井的部分（45,50,55和60）之后选择性地掩模具有光致抗蚀剂（47）的晶片的一部分，减少随后的零度植入物的引导。

公开/授权文献

US20020042184A1 Reduction in well implant channeling and resulting latchup characteristics in shallow trench ilolation by implanting wells through nitride 公开/授权日：2002-04-11

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