专利检索 ap:("Mahalingam Nandakumar" OR "Dixit Kapila" OR "Seetharaman Sridhar") AND inv:"Dixit Kapila" 第 1 页

1.

发明授权
Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitride 有权
标题翻译：通过将氮氧化物注入井，减少了浅沟槽隔离中的良好注入沟槽和产生的闭锁特性

公开(公告)号：US06617217B2

公开(公告)日：2003-09-09

申请号：US09967067

申请日：2001-09-28

申请人： Mahalingam Nandakumar , Dixit Kapila , Seetharaman Sridhar

发明人： Mahalingam Nandakumar , Dixit Kapila , Seetharaman Sridhar

IPC分类号： H01L21336

CPC分类号： H01L21/823892 , H01L21/76237 , H01L21/823878 , H01L27/0921

摘要： Retrograde wells are formed by implanting through nitride films (40). Nitride films (40) are formed after STI (20) formation. By selectively masking a portion of the wafer with photoresist (47) after portions of a retrograde well are formed (45, 50, 55, and 60) the channeling of the subsequent zero degree implants is reduced.

摘要翻译： 通过植入氮化物膜（40）形成逆行井。在STI（20）形成之后形成氮化物膜（40）。通过在形成逆行井的部分（45,50,55和60）之后选择性地掩模具有光致抗蚀剂（47）的晶片的一部分，减少随后的零度植入物的引导。