Invention Grant
US06617249B2 Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method
有权
在单个基板上制造具有不同频率的薄膜体声波谐振器（FBARS）的方法和体现该方法的装置的方法
- Patent Title: Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method
- Patent Title (中): 在单个基板上制造具有不同频率的薄膜体声波谐振器（FBARS）的方法和体现该方法的装置的方法
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Application No.: US09799148Application Date: 2001-03-05
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Publication No.: US06617249B2Publication Date: 2003-09-09
- Inventor: Richard C. Ruby , John D. Larson, III , Paul D. Bradley
- Applicant: Richard C. Ruby , John D. Larson, III , Paul D. Bradley
- Main IPC: H01L21302
- IPC: H01L21302
Abstract:
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
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