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    Duplexer incorporating thin-film bulk acoustic resonators (FBARs)
    4.
    发明授权
    Duplexer incorporating thin-film bulk acoustic resonators (FBARs) 有权
    掺入薄膜体声共振器（FBAR）的双工器

    公开(公告)号：US06262637B1

    公开(公告)日：2001-07-17

    申请号：US09324618

    申请日：1999-06-02

    申请人： Paul D. Bradley ,  John D. Larson, III ,  Richard C. Ruby

    发明人： Paul D. Bradley ,  John D. Larson, III ,  Richard C. Ruby

    IPC分类号： H03H954

    CPC分类号： H03H9/568 ,  H03H9/706

    摘要： An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).

    摘要翻译： 一种基于FBAR的双工器，包括连接在第一端口和第三端口之间的第一端口，第二端口，第三端口，第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。 第一带通滤波器包括具有并联和串联元件的第一梯形电路。 第一梯形电路的每个元件包括膜体声波谐振器（FBAR）。 串联电路包括与第二带通滤波器串联的90°移相器。 第二带通滤波器包括具有分路和串联元件的第二梯形电路。 第二梯形电路的每个元件包括膜体声波谐振器。 一种带通滤波器，包括并联元件和串联元件，其中串联元件和分流元件连接以形成梯形电路，并且每个元件包括膜体声波谐振器（FBAR）。

    Bulk acoustic resonator perimeter reflection system
    5.
    发明授权
    Bulk acoustic resonator perimeter reflection system 有权
    体声共振器周边反射系统

    公开(公告)号：US06424237B1

    公开(公告)日：2002-07-23

    申请号：US09746525

    申请日：2000-12-21

    申请人： Richard C. Ruby ,  John D. Larson, III ,  Paul D. Bradley

    发明人： Richard C. Ruby ,  John D. Larson, III ,  Paul D. Bradley

    IPC分类号： H03H915

    CPC分类号： H03H9/173 ,  H03H9/0211 ,  H03H9/02118 ,  H03H9/132 ,  Y10T29/42

    摘要： A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.

    摘要翻译： 具有高质量因素的体声波谐振器形成在具有形成在基板的顶表面中的凹陷的基板上。 谐振器包括第一电极，压电材料和第二电极。 第一电极设置在衬底的顶表面上并且延伸超过凹陷的边缘第一距离以限定它们之间的第一区域。 压电材料设置在基板的顶表面上并在第一电极上方，第二电极设置在压电材料上。 第二电极包括位于凹部上方的部分。 位于凹部上方的第二电极的部分具有至少一个边缘，该边缘与凹陷的对应边缘偏移第二距离，以限定它们之间的第二区域。 由于位于两个区域的不同材料，第一和第二区域具有不同的阻抗。 此外，第一和第二距离近似等于横过各个区域横向移动的声波的四分之一波长，使得区域边缘的反射构造地干扰以最大化谐振器的反射率。

    Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method
    9.
    发明授权
    Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method 失效
    用于控制膜体声波谐振器中的压电耦合系数的方法和体现该方法的装置

    公开(公告)号：US06954121B2

    公开(公告)日：2005-10-11

    申请号：US10457737

    申请日：2003-06-09

    申请人： Paul D. Bradley ,  Yury Oshmyansky ,  Benjamin Yu ,  John D. Larson, III

    发明人： Paul D. Bradley ,  Yury Oshmyansky ,  Benjamin Yu ,  John D. Larson, III

    IPC分类号： H01L41/09 ,  H01L41/187 ,  H01L41/22 ,  H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/00

    CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/02149

    摘要： An apparatus such as a thin film resonator has a bottom electrode, a top electrode, and a composite layer between the two electrodes. The composite layer includes a piezoelectric (PZ) layer having a first coupling coefficient and a coupling coefficient control (CCC) layer having a second coupling coefficient. By varying the relative thicknesses of the PZ layer and the CCC layer during the manufacturing process, the coupling coefficient of the resonator can be established (to any value between the first coupling coefficient and the second coupling coefficient) with minimal impact on resonant frequency. Further, it is relatively less difficult to fabricate the PZ layer and the CCC layer having the desired coupling coefficient (as a combination of the first coupling coefficient and the second coupling coefficient) compared to the difficulties of fabrication of a uniform PZ layer having the desired coupling coefficient.

    摘要翻译： 诸如薄膜谐振器的装置在两个电极之间具有底电极，顶电极和复合层。 复合层包括具有第一耦合系数的压电（PZ）层和具有第二耦合系数的耦合系数控制（CCC）层。 通过在制造过程中改变PZ层和CCC层的相对厚度，可以以对谐振频率的最小影响来建立谐振器的耦合系数（在第一耦合系数和第二耦合系数之间的任何值）。 此外，制造具有期望的耦合系数（作为第一耦合系数和第二耦合系数的组合）的PZ层和CCC层相对于制造具有期望的均匀PZ层的困难相对较难， 耦合系数。