- 专利标题： Method of forming a contact structure and a container capacitor structure
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申请号： US10080465申请日： 2002-02-22
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公开(公告)号： US06620680B2公开(公告)日： 2003-09-16
- 发明人: D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
- 申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
Method for forming at least a portion of a top electrode of a container capacitor and at least a portion of a contact plug in one deposition are described. In one embodiment, the top electrode is formed interior to a bottom electrode of the container capacitor. In another embodiment, the top electrode is formed interior to, and exterior and below a portion of the bottom electrode of the container capacitor. The method of forming a top electrode of a container capacitor and a contact plug with a same deposition is particularly well-suited for high-density memory array formation.
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